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TOSHIBA SSM6N56FE,LMRoHS

Manufacturer
TOSHIBA
MPN
SSM6N56FE,LM
LCSC Part #
C146449
Packaging
SOT-563(SOT-666)
Customer #
Key Attributes
MOSFET N-CH ARR 20V 800mA SOT-563(SOT-666)
Datasheetpdf iconTOSHIBA SSM6N56FE,LM
In-Stock: 4,090
4,090 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1861$ 0.0261$ 0.13
50+$ 0.1453$ 0.0204$ 1.02
150+$ 0.1279$ 0.0180$ 2.70
500+$ 0.1061$ 0.0149$ 7.45
2,500+$ 0.0964$ 0.0135$ 33.75
4,000+$ 0.0906$ 0.0127$ 50.80
Standard Packaging4000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerTOSHIBA
PackagingSOT-563(SOT-666)
Drain to Source Voltage20V
Current - Continuous Drain(Id)800mA
Pd - Power Dissipation250mW
RDS(on)840mΩ@1.5V
Gate Threshold Voltage (Vgs(th))1V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)9pF
Number2 N-Channel
Input Capacitance(Ciss)55pF
Gate Charge(Qg)1nC@4.5V
Operating Temperature-
Output Capacitance(Coss)16pF
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Features

AI Translation
  • 1.5 - V gate drive voltage
  • Low drain - source on - resistance: RDS(ON)=235 mΩ (max) @ VGS = 4.5 V, ID = 800 mA
  • RDS(ON)=300 mΩ (max) @ VGS = 2.5 V, ID = 600 mA
  • RDS(ON)=480 mΩ (max) @ VGS = 1.8 V, ID = 200 mA
  • RDS(ON)=840 mΩ (max) @ VGS = 1.5 V, ID = 50 mA

Applications

AI Translation
  • High - Speed Switching