TOSHIBA SSM3K56ACT,L3F
| Manufacturer | |
| MPN | SSM3K56ACT,L3F |
| LCSC Part # | C146308 |
| Packaging | SOT-883-3 |
| Customer # | |
| Key Attributes | MOSFET N-CH 20V 1400mA SOT-883-3 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TOSHIBA | |
| Packaging | SOT-883-3 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 16pF | |
| Current - Continuous Drain(Id) | 1.4A | |
| Operating Temperature - | - | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 2.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF | |
| RDS(on) | 840mΩ@1.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 55pF | |
| Gate Charge(Qg) | 1nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 10000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- 1.5 V gate drive voltage.
- Low drain-to-source on-resistance:
- RDS(ON) = 235 mΩ (max) (@ VGS = 4.5 V)
- RDS(ON) = 300 mΩ (max) (@ VGS = 2.5 V)
- RDS(ON) = 480 mΩ (max) (@ VGS = 1.8 V)
- RDS(ON) = 840 mΩ (max) (@ VGS = 1.5 V)
Applications
AI Translation
- High-Speed Switching
In-Stock: 18,970
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Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0504 | $ 0.50 |
| 100+ | $ 0.0395 | $ 3.95 |
| 300+ | $ 0.0341 | $ 10.23 |
| 1,000+ | $ 0.03 | $ 30.00 |
| 5,000+ | $ 0.0267 | $ 133.50 |
| 10,000+ | $ 0.0251 | $ 251.00 |
Standard Packaging10000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TOSHIBA | |
| Packaging | SOT-883-3 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 16pF | |
| Current - Continuous Drain(Id) | 1.4A | |
| Operating Temperature - | - | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 2.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF | |
| RDS(on) | 840mΩ@1.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 55pF | |
| Gate Charge(Qg) | 1nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 10000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- 1.5 V gate drive voltage.
- Low drain-to-source on-resistance:
- RDS(ON) = 235 mΩ (max) (@ VGS = 4.5 V)
- RDS(ON) = 300 mΩ (max) (@ VGS = 2.5 V)
- RDS(ON) = 480 mΩ (max) (@ VGS = 1.8 V)
- RDS(ON) = 840 mΩ (max) (@ VGS = 1.5 V)
Applications
AI Translation
- High-Speed Switching
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



