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ST STF13N60M2 product image
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ST STF13N60M2RoHS

Manufacturer
ST
MPN
STF13N60M2
LCSC Part #
C146208
Packaging
TO-220FPAB-3
Customer #
Key Attributes
MOSFET N-CH 600V 11A TO-220FPAB-3
Datasheetpdf iconST STF13N60M2
In-Stock: 9,289
9,289 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.7181$ 0.72
10+$ 0.5703$ 5.70
50+$ 0.4956$ 24.78
100+$ 0.4224$ 42.24
500+$ 0.377$ 188.50
1,200+$ 0.3542$ 425.04
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-220FPAB-3
Operating Temperature-55℃~+150℃
Drain to Source Voltage600V
Output Capacitance(Coss)32pF
Current - Continuous Drain(Id)11A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)1.1pF
RDS(on)380mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)580pF
Gate Charge(Qg)17nC@10V
TypeN-Channel
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Introduction

AI Translation

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.

Features

AI Translation
  • Extremely low gate charge
  • Lower RDS(on) X area vs previous generation
  • Low gate input resistance
  • 100% avalanche tested
  • Zener-protected

Applications

AI Translation
  • Switching applications