MICROCHIP VN2410L-G
| Manufacturer | |
| MPN | VN2410L-G |
| LCSC Part # | C144193 |
| Packaging | TO-92 |
| Customer # | |
| Key Attributes | MOSFET N-CH 240V 190mA TO-92 |
| Datasheet |  MICROCHIP VN2410L-G |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-92 | |
| Operating Temperature | - | |
| Drain to Source Voltage | 240V | |
| Output Capacitance(Coss) | 50pF | |
| Current - Continuous Drain(Id) | 190mA | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 10Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 125pF | |
| Gate Charge(Qg) | - | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-92 | |
| Operating Temperature | - | |
| Drain to Source Voltage | 240V | |
| Output Capacitance(Coss) | 50pF | |
| Current - Continuous Drain(Id) | 190mA | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 10Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 125pF | |
| Gate Charge(Qg) | - | |
| Type | N-Channel |
Introduction
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Features
- Free from secondary breakdown
- Low power drive requirement
- Ease of paralleling
- Low Ciss and fast switching speeds
- Excellent thermal stability
- Integral source-drain diode
- High input impedance and high gain
Applications
- Motor controls
- Converters
- Amplifiers
- Switches
- Power supply circuits
- Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 3.6327 | $ 3.63 |
| 10+ | $ 3.5807 | $ 35.81 |
| 30+ | $ 3.5466 | $ 106.40 |
| 100+ | $ 3.4767 | $ 347.67 |
Standard Packaging1000/Full Bag | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-92 | |
| Operating Temperature | - | |
| Drain to Source Voltage | 240V | |
| Output Capacitance(Coss) | 50pF | |
| Current - Continuous Drain(Id) | 190mA | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 10Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 125pF | |
| Gate Charge(Qg) | - | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-92 | |
| Operating Temperature | - | |
| Drain to Source Voltage | 240V | |
| Output Capacitance(Coss) | 50pF | |
| Current - Continuous Drain(Id) | 190mA | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 10Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 125pF | |
| Gate Charge(Qg) | - | |
| Type | N-Channel |
Introduction
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Features
- Free from secondary breakdown
- Low power drive requirement
- Ease of paralleling
- Low Ciss and fast switching speeds
- Excellent thermal stability
- Integral source-drain diode
- High input impedance and high gain
Applications
- Motor controls
- Converters
- Amplifiers
- Switches
- Power supply circuits
- Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
C144193 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| VN2406L-G | MICROCHIP | TO-92-3 | 4 | $ 3.5596 | ||
| 1N65 | YFW | TO-92 | 200 | $0.1138 $0.1197 | ||
| VN2410L-G-P014 | MICROCHIP | TO-92-3 | 0 | $ 1.0712 | ||
| VN2410L-G-P013 | MICROCHIP | TO-92-3 | 0 | $ 1.0712 | ||
| 1N60L-T92-K | UTC | TO-92 | 0 | $ 0.1253 | ||
| 1N60L-T92-B | UTC | TO-92 | 0 | $ 0.0648 | ||
| TN5325N3-G-P002 | MICROCHIP | TO-92-3 | 0 | $ 0.7039 | ||
| TN5325N3-G | MICROCHIP | TO-92-3 | 0 | $ 1.5887 | ||
| TN2640N3-G | MICROCHIP | TO-92-3 | 0 | $ 4.9537 | ||
| ZVN4424A | DIODES | TO-92-3 | 0 | $ 1.0582 |