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ST STD17NF25
| Manufacturer | |
| MPN | STD17NF25 |
| LCSC Part # | C140380 |
| Packaging | DPAK |
| Customer # | |
| Key Attributes | MOSFET N-CH 250V 17A DPAK |
| Datasheet |  ST STD17NF25 |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | DPAK | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 178pF | |
| Current - Continuous Drain(Id) | 17A | |
| Operating Temperature - | - | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 90W | |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF | |
| RDS(on) | 165mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1nF | |
| Gate Charge(Qg) | 29.5nC@10V | |
| Type | N-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Features
- Exceptional dv/dt capability
- 100% avalanche tested
- Low gate charge
Applications
- Switching applications
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.3923 | $ 1.39 |
| 10+ | $ 1.1478 | $ 11.48 |
| 30+ | $ 1.0141 | $ 30.42 |
| 100+ | $ 0.8641 | $ 86.41 |
| 500+ | $ 0.7956 | $ 397.80 |
| 1,000+ | $ 0.7663 | $ 766.30 |
Standard Packaging2500/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | DPAK | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 178pF | |
| Current - Continuous Drain(Id) | 17A | |
| Operating Temperature - | - | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 90W | |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF | |
| RDS(on) | 165mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1nF | |
| Gate Charge(Qg) | 29.5nC@10V | |
| Type | N-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Features
- Exceptional dv/dt capability
- 100% avalanche tested
- Low gate charge
Applications
- Switching applications
C140380 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |