ISSI IS25LP064A-JLLE

The IS25LP064A Serial Flash memory offers a versatile storage solution with high flexibility and performance in a simplified pin count package. The device is accessed through a 4 - wire SPI Interface consisting of a Serial Data Input (SI), Serial Data Output (SO), Serial Clock (SCK), and Chip Enable (CE#) pins, which can also be configured to serve as multi - I/O. The device supports Dual and Quad I/O as well as standard, Dual Output, and Quad Output SPI. Clock frequencies of up to 133MHz allow for equivalent clock rates of up to 532MHz (133MHz x 4) which equates to 66Mbytes/s of data throughput. The IS25xP series of Flash adds support for DTR (Double Transfer Rate) commands that transfer addresses and read data on both edges of the clock. These transfer rates can outperform 16 - bit Parallel Flash memories allowing for efficient memory access to support XIP (execute in place) operation. Initial state of the memory array is erased (all bits are set to 1) when shipped from the factory. QPI (Quad Peripheral Interface) supports 2 - cycle instruction further reducing instruction times. Pages can be erased in groups of 4Kbyte sectors, 32Kbyte blocks, 64Kbyte blocks, and/or the entire chip. The uniform sector and block architecture allows for a high degree of flexibility so that the device can be utilized for a broad variety of applications requiring solid data retention.

• Industry Standard Serial Interface
• IS25LP064A: 64Mbit/8Mbyte - 256 bytes per Programmable Page - Supports standard SPI, Fast, Dual, Dual I/O, Quad, Quad I/O, SPI DTR, Dual I/O DTR, Quad I/O DTR, and QPI
• Supports Double Transfer Rate (DTR)
• Supports Serial Flash Discoverable Parameters (SFDP)
• High Performance Serial Flash (SPI)
• 133Mhz Fast Read at VC C = 2.7V to 3.6V
• 104Mhz Fast Read at VC C = 2.3V to 3.6V
• 532MHz equivalent at QPI operation
• 50MHz Normal Read
• DTR (Dual Transfer Rate) up to 66MHz
• Selectable dummy cycles
• Configurable drive strength
• Supports SPI Modes 0 and 3
• More than 100,000 erase/program cycles
• More than 20 - year data retention
• Flexible & Efficient Memory Architecture
• Chip Erase with Uniform Sector/Block Erase (4/32/64 Kbyte)
• Program 1 to 256 bytes per page
• Program/Erase Suspend & Resume
• Efficient Read and Program modes
• Low Instruction Overhead Operations
• Continuous Read 8/16/32/64 - Byte burst Wrap
• Selectable burst length
• QPI for reduced instruction overhead
• Low Power with Wide Temp. Ranges
• Single 2.3V to 3.6V Voltage Supply
• 5 mA Active Read Current (typ.)
• 10 μA Standby Current (typ.)
• 5 μA Deep Power Down (typ.)
• Temp Grades: Extended: -40℃ to +105℃ Auto Grade (A3): -40℃ to +125℃
• Advanced Security Protection
• Software and Hardware Write Protection
• Power Supply lock protect
• 4x256 - Byte dedicated security area with OTP user - lockable bits
• 128 bit Unique ID for each device
• Industry Standard Pin - out & Packages
• 8 - pin SOIC 208mil
• 8 - contact USON 4x3mm
• 8 - contact XSON 4x4mm
• 8 - contact WSON 6x5mm
• 8 - contact WSON 8x6mm
• 16 - pin SOIC 300mil
• 24 - ball TFBGA 6x8mm 4x6
• 24 - ball TFBGA 6x8mm 5x5
• KGD