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Infineon/CYPRESS S29GL256S90FHI010 product image
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Infineon/CYPRESS S29GL256S90FHI010RoHS

Manufacturer
Infineon/CYPRESS
MPN
S29GL256S90FHI010
LCSC Part #
C1348905
Packaging
FBGA-64(11x13)
Customer #
Key Attributes
256Mbit 2.7V~3.6V Parallel FBGA-64(11x13) Memory RoHS
Datasheetpdf iconInfineon/CYPRESS S29GL256S90FHI010
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QtyUnit PriceTotal Amount
1+$ 11.6954$ 11.70
10+$ 11.3067$ 113.07
Standard Packaging180/Full Tray
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerInfineon/CYPRESS
PackagingFBGA-64(11x13)
Operating Temperature-40℃~+85℃
FeaturesWrite enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection;ECC error correction;Power lock protection
Memory Size256Mbit
Voltage - Supply2.7V~3.6V
Program / Erase Cycles100,000 cycles
Clock Frequency-
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)-
Write Cycle Time(tWC)-
Page Programming Time (Tpp)-
InterfaceParallel
Standby Supply Current100uA
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Introduction

AI Translation

The Cypress S29GL01G/512/256/128S are MirrorBit Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

Features

AI Translation
  • CMOS 3.0 Volt Core with Versatile I/O
  • 65 nm MirrorBit Eclipse Technology
  • Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)
  • Versatile I/O Feature – Wide I/O voltage range (V10): 1.65 V to VCC
  • x16 data bus
  • Asynchronous 32-byte Page read
  • 512-byte Programming Buffer – Programming in Page multiples, up to a maximum of 512 bytes
  • Single word and multiple program on same word options
  • Automatic Error Checking and Correction (ECC) – internal hardware ECC with single bit error correction
  • Sector Erase – Uniform 128-kbyte sectors
  • Suspend and Resume commands for Program and Erase operations
  • Status Register, Data Polling, and Ready/Busy pin methods to determine device status
  • Advanced Sector Protection (ASP) – Volatile and non-volatile protection methods for each sector
  • Separate 1024-byte One Time Program (OTP) array with two lockable regions
  • Common Flash Interface (CFI) parameter table
  • Temperature Range / Grade – Industrial (-40 ℃ to +85 ℃) – Industrial Plus (-40 ℃ to +105 ℃) – Automotive, AEC-Q100 Grade 3 (-40 ℃ to +85 ℃) – Automotive, AEC-Q100 Grade 2 (-40 ℃ to +105 ℃)
  • 100,000 Program / Erase Cycles
  • 20 Years Data Retention
  • Packaging Options – 56-pin TSOP – 64-ball LAA Fortified BGA, 13 mmx11 mm – 64-ball LAE Fortified BGA, 9 mmx9 mm – 56-ball VBU Fortified BGA, 9 mmx7 mm