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onsemi MBRS3100T3G
| Manufacturer | |
| MPN | MBRS3100T3G |
| LCSC Part # | C12790 |
| Packaging | SMC(DO-214AB) |
| Customer # | |
| Key Attributes | DIODE SCHOTTKY 100V SMC(DO-214AB) |
| Datasheet |  onsemi MBRS3100T3G |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | onsemi | |
| Packaging | SMC(DO-214AB) | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Voltage - Forward(Vf@If) | 790mV@3A | |
| Reverse Leakage Current (Ir) | 50uA@100V | |
| Non-Repetitive Peak Forward Surge Current | 130A | |
| Current - Rectified | 3A |
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This device employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.
Features
- Small Compact Surface Mountable Package with J- Bend Leads
- Rectangular Package for Automated Handling
- Highly Stable Oxide Passivated Junction
- Excellent Ability to Withstand Reverse Avalanche Energy Transients
- Guard- Ring for Stress Protection
- Pb- Free Package is Available
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2807 | $ 1.40 |
| 50+ | $ 0.2211 | $ 11.06 |
| 150+ | $ 0.1823 | $ 27.35 |
| 500+ | $ 0.1504 | $ 75.20 |
| 2,500+ | $ 0.1363 | $ 340.75 |
| 5,000+ | $ 0.1277 | $ 638.50 |
Standard Packaging2500/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | onsemi | |
| Packaging | SMC(DO-214AB) | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Voltage - Forward(Vf@If) | 790mV@3A | |
| Reverse Leakage Current (Ir) | 50uA@100V | |
| Non-Repetitive Peak Forward Surge Current | 130A | |
| Current - Rectified | 3A |
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This device employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.
Features
- Small Compact Surface Mountable Package with J- Bend Leads
- Rectangular Package for Automated Handling
- Highly Stable Oxide Passivated Junction
- Excellent Ability to Withstand Reverse Avalanche Energy Transients
- Guard- Ring for Stress Protection
- Pb- Free Package is Available
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |