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EDA ModelsEasyEDA
onsemi MBRS3100T3G
| Manufacturer | |
| MPN | MBRS3100T3G |
| LCSC Part # | C12790 |
| Packaging | SMC(DO-214AB) |
| Customer # | |
| Key Attributes | DIODE SCHOTTKY 100V SMC(DO-214AB) |
| Datasheet |  onsemi MBRS3100T3G |
| Alternative Parts | 20 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | onsemi | |
| Packaging | SMC(DO-214AB) | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Voltage - Forward(Vf@If) | 790mV@3A | |
| Reverse Leakage Current (Ir) | 50uA@100V | |
| Non-Repetitive Peak Forward Surge Current | 130A | |
| Current - Rectified | 3A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | onsemi | |
| Packaging | SMC(DO-214AB) | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -65℃~+175℃ |
| Type | Description | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Voltage - Forward(Vf@If) | 790mV@3A | |
| Reverse Leakage Current (Ir) | 50uA@100V | |
| Non-Repetitive Peak Forward Surge Current | 130A | |
| Current - Rectified | 3A |
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Introduction
AI Translation
This device employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.
Features
AI Translation
- Small Compact Surface Mountable Package with J- Bend Leads
- Rectangular Package for Automated Handling
- Highly Stable Oxide Passivated Junction
- Excellent Ability to Withstand Reverse Avalanche Energy Transients
- Guard- Ring for Stress Protection
- Pb- Free Package is Available
In-Stock: 14,330
14,330 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3023 | $ 1.51 |
| 50+ | $ 0.2381 | $ 11.91 |
| 150+ | $ 0.1963 | $ 29.45 |
| 500+ | $ 0.162 | $ 81.00 |
| 2,500+ | $ 0.1467 | $ 366.75 |
| 5,000+ | $ 0.1376 | $ 688.00 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | onsemi | |
| Packaging | SMC(DO-214AB) | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Voltage - Forward(Vf@If) | 790mV@3A | |
| Reverse Leakage Current (Ir) | 50uA@100V | |
| Non-Repetitive Peak Forward Surge Current | 130A | |
| Current - Rectified | 3A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | onsemi | |
| Packaging | SMC(DO-214AB) | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -65℃~+175℃ |
| Type | Description | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Voltage - Forward(Vf@If) | 790mV@3A | |
| Reverse Leakage Current (Ir) | 50uA@100V | |
| Non-Repetitive Peak Forward Surge Current | 130A | |
| Current - Rectified | 3A |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This device employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.
Features
AI Translation
- Small Compact Surface Mountable Package with J- Bend Leads
- Rectangular Package for Automated Handling
- Highly Stable Oxide Passivated Junction
- Excellent Ability to Withstand Reverse Avalanche Energy Transients
- Guard- Ring for Stress Protection
- Pb- Free Package is Available
C12790 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| MBRS3100T3G(MS) | MSKSEMI | SMC | 2,710 | $ 0.098 | ||
| NRVBS3100T3G | onsemi | SMC | 2,020 | $0.3490 $0.5209 | ||
| MB310_R1_00001 | PANJIT | SMC(DO-214AB) | 1,545 | $ 0.116 | ||
| MB510_R1_00001 | PANJIT | DO-214AB(SMC) | 285 | $ 0.2189 | ||
| SS510C | XUMAO | SMC | 3,950 | $0.0713 $0.0792 | ||
| SS510C | YTL | SMC | 2,990 | $ 0.0695 | ||
| MB315_R2_00001 | PANJIT | SMC | 1,125 | $ 0.0772 | ||
| MB515_R1_00001 | PANJIT | SMC(DO-214AB) | 2,365 | $ 0.1701 | ||
| MB520_R1_00001 | PANJIT | SMC(DO-214AB) | 2,240 | $ 0.2088 | ||
| MBRS3100T3G | Tokmas | DO-214AB | 1,640 | $0.0855 $0.0949 | ||
| CMSH5-100HV TR13 PBFREE | Central | SMC | 0 | $ 0.4417 | ||
| MB510-AU_R1_000A2 | PANJIT | SMC(DO-214AB) | 0 | $ 0.1484 | ||
| CMSH5-150HV TR13 PBFREE | Central | SMC | 0 | $ 0.5374 | ||
| MB310-AU_R1_000A1 | PANJIT | SMC(DO-214AB) | 0 | $ 0.1694 | ||
| SR510C | DIYI Elec Tech | SMC | 0 | $ 0.1125 | ||
| HSM3100J/TR13 | MICROCHIP | DO-214AB | 0 | $ 3.7595 | ||
| HSM3100JE3/TR13 | MICROCHIP | DO-214AB | 0 | $ 2.3291 | ||
| MB315_R1_00001 | PANJIT | SMC(DO-214AB) | 0 | $ 0.1584 | ||
| MB320_R1_00001 | PANJIT | SMC(DO-214AB) | 0 | $ 0.1742 | ||
| S510L_R1_00001 | PANJIT | SMC(DO-214AB) | 0 | $ 0.1526 |