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Nexperia BGU8009,115RoHS

Manufacturer
MPN
BGU8009,115
LCSC Part #
C126374
Packaging
XSON-6(0.9x1.1)
Customer #
Key Attributes
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS and LTE B32
Datasheetpdf iconNexperia BGU8009,115
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QtyUnit Price(Reference Only)Total Amount
5+$ 0.4303$ 2.15
50+$ 0.3676$ 18.38
150+$ 0.3407$ 51.11
500+$ 0.3071$ 153.55
2,500+$ 0.2713$ 678.25
5,000+$ 0.2623$ 1311.50
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryRF and Wireless/RF Amplifiers
ManufacturerNexperia
PackagingXSON-6(0.9x1.1)
Input Return Loss17.5dB
Frequency Range1.452GHz~1.496GHz;1.559GHz~1.61GHz
Operating Temperature-40℃~+85℃
Gain20dB
Voltage - Supply1.5V~3.1V
Output Return Loss23.5dB
Noise Figure0.65dB
FeaturesLow-power mode;Integrated bias circuit;ESD protection;Output matching integration;Fast enable control
IP36dBm
P1dB-7dBm
Current - Supply2.6mA

Introduction

AI Translation

The BGU8009 is, also known as the GPS1201M, a Low-Noise Amplifier (LNA) for GNSS receiver and LTE Band 32 down link applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8009 requires one external matching inductor and one external decoupling capacitor. The BGU8009 adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance when jamming signals from co-existing cellular transmitters are present. At low jamming power levels, it delivers 18 dB gain at a noise figure of 0.65 dB. During high jamming power levels, resulting for example from a cellular transmit burst, it temporarily increases its bias current to improve sensitivity.

Features

AI Translation
  • Covers full GNSS L1 band, from 1559 MHz to 1610 MHz and LTE band 32 from 1452 MHz to 1496 MHz
  • GNSS: – Noise figure = 0.65 dB – Gain 18 dB – High input 1 dB compression point of -7 dBm – High out of band |P3| of 6 dBm
  • LTE B32: – Noise figure = 0.65 dB – Gain 20 dB – High input 1 dB compression point of -8.5 dBm
  • Supply voltage 1.5 V to 3.1 V
  • Optimized performance at low supply current of 4.2 mA
  • Power-down mode current consumption < 1 μA
  • Integrated temperature stabilized bias for easy design
  • Requires only one input matching inductor and one supply decoupling capacitor
  • Input and output DC decoupled
  • ESD protection on all pins (HBM > 2 kV)
  • Integrated matching for the output
  • Available in a 6-pins leadless package 1.1 mm×0.9 mm×0.47 mm; 0.4 mm pitch: SOT1230
  • 180 GHz transit frequency - SiGe:C technology
  • Moisture sensitivity level 1

Applications

AI Translation
  • Smart phones
  • Feature phones
  • Tablets
  • Digital still cameras
  • Digital video cameras
  • RF front-end modules
  • Complete GNSS modules
  • Personal health applications