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onsemi FDB44N25TM
| Manufacturer | |
| MPN | FDB44N25TM |
| LCSC Part # | C125737 |
| Packaging | D2PAK |
| Customer # | |
| Key Attributes | 250V 44A 5V 307W 69mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS |
| Datasheet |  onsemi FDB44N25TM |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | D2PAK | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 585pF | |
| Current - Continuous Drain(Id) | 44A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 307W | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| RDS(on) | 69mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.87nF | |
| Gate Charge(Qg) | 61nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | D2PAK | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 585pF | |
| Current - Continuous Drain(Id) | 44A | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 307W | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| RDS(on) | 69mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.87nF | |
| Gate Charge(Qg) | 61nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
UniFET™ MOSFET is based on planar stripe and DMOS technology. This MOSFET is designed to reduce on-resistance, deliver superior switching performance, and provide higher avalanche energy ruggedness. This device family is suitable for switched-mode power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX power supplies, and electronic lamp ballasts.
Features
AI Translation
- R DS(on) = 69 mΩ (max) at V GS = 10 V, I D = 22 A
- Low gate charge (47 nC typical)
- Low C rss (60 pF typical)
- 100% avalanche tested
Applications
AI Translation
- Plasma TVs - Lighting - Uninterruptible Power Supplies - AC/DC Power Supplies
In-Stock: 21
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.177 | $ 2.18 |
| 10+ | $ 1.8992 | $ 18.99 |
| 30+ | $ 1.7481 | $ 52.44 |
| 100+ | $ 1.5743 | $ 157.43 |
| 500+ | $ 1.498 | $ 749.00 |
| 800+ | $ 1.4638 | $ 1171.04 |
Standard Packaging800/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | D2PAK | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 585pF | |
| Current - Continuous Drain(Id) | 44A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 307W | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| RDS(on) | 69mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.87nF | |
| Gate Charge(Qg) | 61nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | D2PAK | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 585pF | |
| Current - Continuous Drain(Id) | 44A | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 307W | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| RDS(on) | 69mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.87nF | |
| Gate Charge(Qg) | 61nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
UniFET™ MOSFET is based on planar stripe and DMOS technology. This MOSFET is designed to reduce on-resistance, deliver superior switching performance, and provide higher avalanche energy ruggedness. This device family is suitable for switched-mode power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX power supplies, and electronic lamp ballasts.
Features
AI Translation
- R DS(on) = 69 mΩ (max) at V GS = 10 V, I D = 22 A
- Low gate charge (47 nC typical)
- Low C rss (60 pF typical)
- 100% avalanche tested
Applications
AI Translation
- Plasma TVs - Lighting - Uninterruptible Power Supplies - AC/DC Power Supplies
C125737 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| HSH044N25 | HUASHUO | TO-263 | 813 | $ 1.9433 | ||
| NVB072N65S3 | onsemi | D2PAK | 2 | $ 15.8028 | ||
| CMB65R080SD | Cmos | TO-263 | 448 | $2.0085 $2.1142 | ||
| FCB070N65S3 | onsemi | D2PAK | 44 | $ 6.5308 | ||
| OSG60R074KSZF | ORIENTAL SEMI | TO-263 | 139 | $ 2.7912 | ||
| SIHB055N60EF-GE3 | VISHAY | D2PAK(TO-263) | 6 | $ 5.3665 | ||
| SIHB053N60E-GE3 | VISHAY | D2PAK(TO-263) | 6 | $ 5.0052 | ||
| IPB64N25S320ATMA1-VB | VBsemi Elec | TO-263(D2PAK) | 0 | $5.9470 $6.26 | ||
| VBGL1252N | VBsemi Elec | TO-263 | 0 | $ 7.6274 | ||
| NCEP02580D | NCE | TO-263-2L | 0 | $ 3.6928 |