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onsemi FDP6030BL
| Manufacturer | |
| MPN | FDP6030BL |
| LCSC Part # | C124436 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | 30V 40A 3V 60W 24mΩ@4.5V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS |
| Datasheet |  onsemi FDP6030BL |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220 | |
| Operating Temperature | -65℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 40A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 24mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 17nC@5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220 | |
| Operating Temperature | -65℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 40A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 24mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 17nC@5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This N-channel logic-level MOSFET is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. Compared to other MOSFETs with similar RDS(ON) specifications, these MOSFETs feature faster switching speeds and lower gate charge, enabling higher overall efficiency in DC/DC power supply designs.
Features
AI Translation
- RDS(ON) = 0.024 Ω (at VGS = 4.5 V)
- 40 A, 30 V, RDS(ON) = 0.018 Ω (at VGS = 10 V)
- Key DC electrical parameters specified at high temperature.
- Robust integrated source-drain diode eliminates external Zener transient suppressors.
- High-performance trench technology for ultra-low \mathsfR\mathsfDS(ON)
- Maximum junction temperature rating of 175℃.
Applications
AI Translation
- Power switch applications
- Hard switching and high-frequency circuits
- DC-DC converters
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.2933 | $ 1.29 |
| 10+ | $ 1.277 | $ 12.77 |
| 30+ | $ 1.2673 | $ 38.02 |
| 100+ | $ 1.2559 | $ 125.59 |
Standard Packaging800/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220 | |
| Operating Temperature | -65℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 40A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 24mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 17nC@5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220 | |
| Operating Temperature | -65℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 40A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 24mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 17nC@5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This N-channel logic-level MOSFET is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. Compared to other MOSFETs with similar RDS(ON) specifications, these MOSFETs feature faster switching speeds and lower gate charge, enabling higher overall efficiency in DC/DC power supply designs.
Features
AI Translation
- RDS(ON) = 0.024 Ω (at VGS = 4.5 V)
- 40 A, 30 V, RDS(ON) = 0.018 Ω (at VGS = 10 V)
- Key DC electrical parameters specified at high temperature.
- Robust integrated source-drain diode eliminates external Zener transient suppressors.
- High-performance trench technology for ultra-low \mathsfR\mathsfDS(ON)
- Maximum junction temperature rating of 175℃.
Applications
AI Translation
- Power switch applications
- Hard switching and high-frequency circuits
- DC-DC converters
C124436 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| CMP50N03 | Cmos | TO-220 | 105 | $0.2648 $0.2787 | ||
| FDP3672-JSM | JSMSEMI | TO-220-3 | 200 | $ 0.7691 | ||
| IRF1310NPBF-JSM | JSMSEMI | TO-220-3 | 200 | $ 0.3357 | ||
| G200N06TH | GOFORD | TO-220 | 38 | $ 0.4549 | ||
| 200N04T | HL | TO-220 | 928 | $ 0.4012 | ||
| AGM25N15C | AGMSEMI | TO-220C | 98 | $ 0.9259 | ||
| GT280N20T | GOFORD | TO-220 | 44 | $ 1.9103 | ||
| IPP70N04S4-06 | Infineon | TO-220-3 | 0 | $ 1.4864 | ||
| AP40N03GP | APEC | TO-220 | 0 | $ 0.5963 | ||
| HUFA76429P3 | onsemi | TO-220-3 | 0 | $ 0.4085 |