Shanghai Prisemi Elec PTVSHC3N7VU
| Manufacturer | Shanghai Prisemi ElecAsian Brands |
| MPN | PTVSHC3N7VU |
| LCSC Part # | C110756 |
| Packaging | DFN2x2-3L |
| Customer # | |
| Key Attributes | TVS DIODE 7VWM 19VC DFN2x2-3L |
| Datasheet |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Manufacturer | Shanghai Prisemi Elec | |
| Packaging | DFN2x2-3L | |
| Clamping Voltage | 19V | |
| Peak Pulse Current (Ipp) | 260A@8/20us | |
| Peak Pulse Power Dissipation (Ppp) | 4.3kW@8/20us | |
| Number of Channels | 1 | |
| Voltage - Breakdown | 10V | |
| type | TVS | |
| Reverse Leakage Current (Ir) | 1uA | |
| Reverse Stand-Off Voltage (Vrwm) | 7V |
| Type | Description | |
|---|---|---|
| Category | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Manufacturer | Shanghai Prisemi Elec | |
| Packaging | DFN2x2-3L | |
| Clamping Voltage | 19V | |
| Peak Pulse Current (Ipp) | 260A@8/20us | |
| Peak Pulse Power Dissipation (Ppp) | 4.3kW@8/20us |
| Type | Description | |
|---|---|---|
| Number of Channels | 1 | |
| Voltage - Breakdown | 10V | |
| type | TVS | |
| Reverse Leakage Current (Ir) | 1uA | |
| Reverse Stand-Off Voltage (Vrwm) | 7V |
Introduction
The PTVSHC3N7VU ESD protector is designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, lower operating voltage, lower clamping voltage and no device degradation when compared to MLVs. The PTVSHC3N7VU protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. The PTVSHC3N7VU is available in a DFN2×2 - 3L package with working voltages of 7 volt. It is used to meet the ESD immunity requirements of IEC 61000 - 4 - 2 (±30KV air, ±30KV contact discharge)
Features
- 4300W Peak pulse power per line (tP = 8/20μs)
- DFN2×2 - 3L package
- Response time is typically <1 ns
- Protect one I/O or power line
- Low clamping Voltage
- RoHS compliant
- Transient protection for data lines to IEC 61000 - 4 - 2(ESD): ±30KV(air), ±30KV(contact); IEC 61000 - 4 - 4 (EFT) 80A (5/50ns) IEC 61000 - 4 - 5 (Lightning) 260A (8/20us)
Applications
- Cell phone handsets and accessories
- Personal digital assistants (PDA’s)
- Notebooks, desktops, and servers
- Portable instrumentation
- Cordless phones
- Digital cameras
- Peripherals
- MP3 players
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0819 | $ 0.82 |
| 100+ | $ 0.0677 | $ 6.77 |
| 300+ | $ 0.0606 | $ 18.18 |
| 3,000+ | $ 0.0539 | $ 161.70 |
| 6,000+ | $ 0.0496 | $ 297.60 |
| 9,000+ | $ 0.0475 | $ 427.50 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Manufacturer | Shanghai Prisemi Elec | |
| Packaging | DFN2x2-3L | |
| Clamping Voltage | 19V | |
| Peak Pulse Current (Ipp) | 260A@8/20us | |
| Peak Pulse Power Dissipation (Ppp) | 4.3kW@8/20us | |
| Number of Channels | 1 | |
| Voltage - Breakdown | 10V | |
| type | TVS | |
| Reverse Leakage Current (Ir) | 1uA | |
| Reverse Stand-Off Voltage (Vrwm) | 7V |
| Type | Description | |
|---|---|---|
| Category | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Manufacturer | Shanghai Prisemi Elec | |
| Packaging | DFN2x2-3L | |
| Clamping Voltage | 19V | |
| Peak Pulse Current (Ipp) | 260A@8/20us | |
| Peak Pulse Power Dissipation (Ppp) | 4.3kW@8/20us |
| Type | Description | |
|---|---|---|
| Number of Channels | 1 | |
| Voltage - Breakdown | 10V | |
| type | TVS | |
| Reverse Leakage Current (Ir) | 1uA | |
| Reverse Stand-Off Voltage (Vrwm) | 7V |
Introduction
The PTVSHC3N7VU ESD protector is designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, lower operating voltage, lower clamping voltage and no device degradation when compared to MLVs. The PTVSHC3N7VU protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. The PTVSHC3N7VU is available in a DFN2×2 - 3L package with working voltages of 7 volt. It is used to meet the ESD immunity requirements of IEC 61000 - 4 - 2 (±30KV air, ±30KV contact discharge)
Features
- 4300W Peak pulse power per line (tP = 8/20μs)
- DFN2×2 - 3L package
- Response time is typically <1 ns
- Protect one I/O or power line
- Low clamping Voltage
- RoHS compliant
- Transient protection for data lines to IEC 61000 - 4 - 2(ESD): ±30KV(air), ±30KV(contact); IEC 61000 - 4 - 4 (EFT) 80A (5/50ns) IEC 61000 - 4 - 5 (Lightning) 260A (8/20us)
Applications
- Cell phone handsets and accessories
- Personal digital assistants (PDA’s)
- Notebooks, desktops, and servers
- Portable instrumentation
- Cordless phones
- Digital cameras
- Peripherals
- MP3 players
C110756 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |



