ST STP10NK60ZFP
| Manufacturer | |
| MPN | STP10NK60ZFP |
| LCSC Part # | C110590 |
| Packaging | TO-220F |
| Customer # | |
| Key Attributes | 600V 10A 4.5V 35W 750mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220F | |
| Configuration | - | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 10A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 35W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 750mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.37nF | |
| Gate Charge(Qg) | - | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These devices are N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well-established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Features
AI Translation
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Zener-protected
Applications
AI Translation
- Switching applications
In-Stock: 106
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Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.6006 | $ 0.60 |
| 10+ | $ 0.4834 | $ 4.83 |
| 50+ | $ 0.4248 | $ 21.24 |
| 100+ | $ 0.3662 | $ 36.62 |
| 500+ | $ 0.3321 | $ 166.05 |
| 1,000+ | $ 0.3142 | $ 314.20 |
Standard Packaging50/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220F | |
| Configuration | - | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 10A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 35W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 750mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.37nF | |
| Gate Charge(Qg) | - | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These devices are N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well-established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Features
AI Translation
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Zener-protected
Applications
AI Translation
- Switching applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |


