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Infineon IKW20N60TRoHS

Manufacturer
MPN
IKW20N60T
LCSC Part #
C10456
Packaging
TO-247
Customer #
Key Attributes
TrenchStop Series 600V IGBT with EmCon HE Diode
Datasheetpdf iconInfineon IKW20N60T
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QtyUnit Price(Reference Only)Total Amount
1+$ 1.7436$ 1.74
10+$ 1.4784$ 14.78
30+$ 1.0784$ 32.35
90+$ 0.9141$ 82.27
510+$ 0.8409$ 428.86
990+$ 0.8084$ 800.32
Standard Packaging30/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerInfineon
PackagingTO-247
Td(off)199ns
Pd - Power Dissipation166W
Td(on)18ns
Current - Collector(Ic)20A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)32pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.1V@290uA
Operating Temperature-40℃~+175℃
Vce Saturation(VCE(sat))2.05V@20A,15V
Collector Cut-Off Current (Ices)-
Reverse Recovery Time(trr)41ns
Switching Energy(Eoff)460uJ
Turn-On Energy (Eon)310uJ
Input Capacitance(Cies)1.1nF
Output Capacitance(Coes)71pF
Gate Charge(Qg)120nC@480V

Features

AI Translation
  • Very low VCE(sat) 1.5 V (typ.)
  • Maximum Junction Temperature 175 ℃
  • Short circuit withstand time – 5µs
  • Trench and Fieldstop technology for 600 V applications offers very tight parameter distribution
  • Trench and Fieldstop technology for 600 V applications offers high ruggedness, temperature stable behavior
  • Trench and Fieldstop technology for 600 V applications offers very high switching speed
  • Trench and Fieldstop technology for 600 V applications offers low VCE(sat)
  • Positive temperature coefficient in VCE(sat)
  • Low EMI
  • Low Gate Charge
  • Very soft, fast recovery anti-parallel EmCon HE diode

Applications

AI Translation
  • Frequency Converters
  • Uninterrupted Power Supply