NTE Electronics 2N3714
| Manufacturer | |
| MPN | 2N3714 |
| LCSC Part # | C7175461 |
| Packaging | TO-3 |
| Customer # | |
| Key Attributes | 80V 25 10A NPN TO-3 Single Bipolar Transistors RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-3 | |
| Current - Collector Cutoff | 1mA | |
| Operating Temperature | -65℃~+200℃ | |
| Transition frequency(fT) | 4MHz | |
| Collector - Emitter Voltage VCEO | 80V | |
| DC Current Gain | 25 | |
| Current - Collector(Ic) | 10A | |
| Pd - Power Dissipation | 150W | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-3 | |
| Current - Collector Cutoff | 1mA | |
| Operating Temperature | -65℃~+200℃ | |
| Transition frequency(fT) | 4MHz |
| Type | Description | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 80V | |
| DC Current Gain | 25 | |
| Current - Collector(Ic) | 10A | |
| Pd - Power Dissipation | 150W | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1V |
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Introduction
AI Translation
2N3714 is a silicon NPN transistor in a TO-3 package, designed for medium-speed switching and amplifier applications.
Features
AI Translation
- Gain range specified at 1A and 3A
- Low collector-emitter saturation voltage: VCE(sat) = 0.5V (typical) at IC = 5A, IB = 500mA
- Excellent safe operating area
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 3.9446 | $ 3.94 |
| 200+ | $ 1.5746 | $ 314.92 |
| 500+ | $ 1.5215 | $ 760.75 |
| 1,000+ | $ 1.4958 | $ 1495.80 |
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-3 | |
| Current - Collector Cutoff | 1mA | |
| Operating Temperature | -65℃~+200℃ | |
| Transition frequency(fT) | 4MHz | |
| Collector - Emitter Voltage VCEO | 80V | |
| DC Current Gain | 25 | |
| Current - Collector(Ic) | 10A | |
| Pd - Power Dissipation | 150W | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-3 | |
| Current - Collector Cutoff | 1mA | |
| Operating Temperature | -65℃~+200℃ | |
| Transition frequency(fT) | 4MHz |
| Type | Description | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 80V | |
| DC Current Gain | 25 | |
| Current - Collector(Ic) | 10A | |
| Pd - Power Dissipation | 150W | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
2N3714 is a silicon NPN transistor in a TO-3 package, designed for medium-speed switching and amplifier applications.
Features
AI Translation
- Gain range specified at 1A and 3A
- Low collector-emitter saturation voltage: VCE(sat) = 0.5V (typical) at IC = 5A, IB = 500mA
- Excellent safe operating area
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |

