VISHAY SI7460DP-T1-GE3
| Manufacturer | |
| MPN | SI7460DP-T1-GE3 |
| LCSC Part # | C5918280 |
| Packaging | PowerPAKSO-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 18A PowerPAKSO-8 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAKSO-8 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 5.4W | |
| RDS(on) | 9.6mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 65nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAKSO-8 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 18A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 5.4W | |
| RDS(on) | 9.6mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 65nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Halogen-free per IEC 61249-2-21
- TrenchFET Power MOSFET
- New low thermal resistance PowerPAK package, 1.07 mm height
Applications
AI Translation
- Secondary Rectification - Point of Load
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Minimum: 1Multiple: 1Sales Unit: Piece
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.9585 | $ 2.96 |
| 10+ | $ 2.9146 | $ 29.15 |
| 30+ | $ 2.8854 | $ 86.56 |
| 100+ | $ 2.8545 | $ 285.45 |
Standard Packaging3000/Full Reel | ||
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAKSO-8 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 5.4W | |
| RDS(on) | 9.6mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 65nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | PowerPAKSO-8 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 18A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 5.4W | |
| RDS(on) | 9.6mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 65nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Halogen-free per IEC 61249-2-21
- TrenchFET Power MOSFET
- New low thermal resistance PowerPAK package, 1.07 mm height
Applications
AI Translation
- Secondary Rectification - Point of Load
C5918280 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



