TOSHIBA TK090U65Z,RQ
| Manufacturer | |
| MPN | TK090U65Z,RQ |
| LCSC Part # | C5798167 |
| Packaging | - |
| Customer # | |
| Key Attributes | 650V 30A 4V 230W 90mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TOSHIBA | |
| Packaging | - | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 230W | |
| RDS(on) | 90mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.78nF | |
| Gate Charge(Qg) | 47nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TOSHIBA | |
| Packaging | - | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 230W | |
| RDS(on) | 90mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.78nF | |
| Gate Charge(Qg) | 47nC@10V |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Low drain-source on-resistance: RDS(ON) = 0.07Ω (typical)
- High-speed switching with low capacitance
- Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.27 mA)
Applications
AI Translation
- Switching Power Supply
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 5.8697 | $ 5.87 |
| 200+ | $ 2.3428 | $ 468.56 |
| 500+ | $ 2.2635 | $ 1131.75 |
| 1,000+ | $ 2.2254 | $ 2225.40 |
Standard Packaging2000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TOSHIBA | |
| Packaging | - | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 230W | |
| RDS(on) | 90mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.78nF | |
| Gate Charge(Qg) | 47nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TOSHIBA | |
| Packaging | - | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 230W | |
| RDS(on) | 90mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.78nF | |
| Gate Charge(Qg) | 47nC@10V |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Low drain-source on-resistance: RDS(ON) = 0.07Ω (typical)
- High-speed switching with low capacitance
- Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.27 mA)
Applications
AI Translation
- Switching Power Supply
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

