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Nexperia PMN70XPX
| Manufacturer | |
| MPN | PMN70XPX |
| LCSC Part # | C552995 |
| Packaging | SOT-457 |
| Customer # | |
| Key Attributes | 20V 3.1A 900mV 88mΩ@4.5V 1 P-Channel SOT-457 Single FETs, MOSFETs RoHS |
| Datasheet |  Nexperia PMN70XPX |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-457 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.1A | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Pd - Power Dissipation | 530mW;4.46W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 88mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 550pF | |
| Gate Charge(Qg) | 7.5nC@4.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-457 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.1A | |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 530mW;4.46W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 88mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 550pF | |
| Gate Charge(Qg) | 7.5nC@4.5V |
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Introduction
AI Translation
P-channel enhancement mode FET using trench MOSFET technology, in a small SOT457 (SC-74) SMD plastic package.
Features
AI Translation
- Trench MOSFET technology
- Low threshold voltage
- Ultra-fast switching speed
- Enhanced power dissipation capability, up to 1240 mW
Applications
AI Translation
- Relay driver - High-speed line driver - High-side load switch - Switching circuit
In-Stock: 3,065
3,065 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3599 | $ 1.80 |
| 50+ | $ 0.294 | $ 14.70 |
| 150+ | $ 0.2657 | $ 39.86 |
| 500+ | $ 0.2305 | $ 115.25 |
| 3,000+ | $ 0.2148 | $ 644.40 |
| 6,000+ | $ 0.2054 | $ 1232.40 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-457 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.1A | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Pd - Power Dissipation | 530mW;4.46W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 88mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 550pF | |
| Gate Charge(Qg) | 7.5nC@4.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-457 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.1A | |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 530mW;4.46W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 88mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 550pF | |
| Gate Charge(Qg) | 7.5nC@4.5V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
P-channel enhancement mode FET using trench MOSFET technology, in a small SOT457 (SC-74) SMD plastic package.
Features
AI Translation
- Trench MOSFET technology
- Low threshold voltage
- Ultra-fast switching speed
- Enhanced power dissipation capability, up to 1240 mW
Applications
AI Translation
- Relay driver - High-speed line driver - High-side load switch - Switching circuit
C552995 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| DMP2075UVT-7 | DIODES | TSOT-26 | 30 | $ 0.1449 | ||
| PMN30XPEX | Nexperia | SOT-457 | 35 | $ 0.5443 | ||
| BSL211SP H6327 | Infineon | TSOP-6 | 20 | $0.5870 $1.5863 | ||
| HSW3415 | HUASHUO | SOT-23-6L | 1,600 | $ 0.0562 | ||
| SP3401TS | Siliup | SOT-23-6L | 2,700 | $ 0.0252 | ||
| AO6401A | UMW | SOT-23-6 | 5,190 | $ 0.062 | ||
| DMP6110SVT-7 | DIODES | TSOT-26 | 1,365 | $ 0.5086 | ||
| SIL2305B-TP | MCC | SOT-23-6L | 3,000 | $ 0.2757 | ||
| PJS6413_S1_00001 | PANJIT | SOT-23-6 | 0 | $ 0.0791 | ||
| TSM3457CX6 RFG | Taiwan Semiconductor | SOT-26 | 0 | $ 0.2135 |