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XDS TX50N06
| Manufacturer | XDSAsian Brands |
| MPN | TX50N06 |
| LCSC Part # | C448633 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 50A TO-252 |
| Datasheet | XDS TX50N06 |
| RoHS Compliance | 1 documents available |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | XDS | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 158pF | |
| Current - Continuous Drain(Id) | 50A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 85W | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.05nF | |
| Gate Charge(Qg) | 50nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | XDS | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 158pF | |
| Current - Continuous Drain(Id) | 50A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 85W | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.05nF | |
| Gate Charge(Qg) | 50nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The TX50N06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application.
Features
AI Translation
- High density cell design for ultra low RDS(on)
- Excellent package for good heat dissipation
In-Stock: 4,365
4,365 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2532 | $ 1.27 |
| 50+ | $ 0.197 | $ 9.85 |
| 150+ | $ 0.173 | $ 25.95 |
| 500+ | $ 0.1429 | $ 71.45 |
| 2,500+ | $ 0.1262 | $ 315.50 |
| 5,000+ | $ 0.1182 | $ 591.00 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | XDS | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 158pF | |
| Current - Continuous Drain(Id) | 50A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 85W | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.05nF | |
| Gate Charge(Qg) | 50nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | XDS | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 158pF | |
| Current - Continuous Drain(Id) | 50A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 85W | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.05nF | |
| Gate Charge(Qg) | 50nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The TX50N06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application.
Features
AI Translation
- High density cell design for ultra low RDS(on)
- Excellent package for good heat dissipation
C448633 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |