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MACOM MA4E1310

Produttore
MACOM
Cod. Prod.
MA4E1310
Cod. LCSC
C4468489
Imballo
ODS-1278
Numero Cliente
Attr. chiave
1 Independent 800mV@1mA 7V ODS-1278 RF Diodes
Scheda Tecnicapdf iconMACOM MA4E1310
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
QtàPr. unit.(Solo per riferimento)Importo totale
1+$ 2.63$ 2.63
200+$ 1.0183$ 203.66
500+$ 0.9828$ 491.40
1,000+$ 0.9643$ 964.30
Package Standard100/Full Bag
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Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaDiscrete Semiconductors/Diodes/RF Diodes
ProduttoreMACOM
ImballoODS-1278
Current - Rectified-
Non-Repetitive Peak Forward Surge Current-
Diode Configuration1 Independent
Reverse Leakage Current (Ir)-
Operating Junction Temperature Range-65℃~+125℃
Voltage - Forward(Vf@If)800mV@1mA
DC Reverse Voltage(Vr)7V
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Descrizione

Traduzione AI

M/A-COM's MA4E1310 is a GaAs flip chip Schottky barrier diode. The diode is fabricated on OMCVD epitaxial wafers using a process specifically designed for high device uniformity and extremely low parasitics. The device features full passivation with silicon nitride, plus an additional polyimide layer for scratch protection. These protective coatings prevent junction damage during automated or manual handling. The flip chip configuration is suitable for drop-in mounting.

Caratteristiche

Traduzione AI
  • Low series resistance
  • Low capacitance
  • High cutoff frequency
  • Silicon nitride passivation
  • Polyimide scratch protection
  • Design for easy circuit insertion

Applicazioni

Traduzione AI

This diode's high cutoff frequency makes it suitable for millimeter-wave band applications. Typical applications include single-balanced and double-balanced mixers in PCN transceivers and radios, automotive radar detectors, and more. The device can be used at frequencies up to 110 GHz.