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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | SOT-23-3L | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 14pF | |
| Current - Continuous Drain(Id) | 2.5A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 1W | |
| RDS(on) | 280mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 440pF | |
| Gate Charge(Qg) | 5.3nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | SOT-23-3L | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 14pF | |
| Current - Continuous Drain(Id) | 2.5A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 1W | |
| RDS(on) | 280mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 440pF | |
| Gate Charge(Qg) | 5.3nC@10V |
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Features
AI Translation
- Ultra-low gate charge
- RoHS-compliant devices available
- Excellent Cdv/dt immunity
- Advanced high cell density trench technology
In-Stock: 11,820
11,820 In stock, ships now
Minimum: 20Multiple: 20Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 20+ | $ 0.0324 | $ 0.65 |
| 200+ | $ 0.0256 | $ 5.12 |
| 600+ | $ 0.0218 | $ 13.08 |
| 3,000+ | $ 0.018 | $ 54.00 |
| 9,000+ | $ 0.016 | $ 144.00 |
| 21,000+ | $ 0.015 | $ 315.00 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | SOT-23-3L | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 14pF | |
| Current - Continuous Drain(Id) | 2.5A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 1W | |
| RDS(on) | 280mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 440pF | |
| Gate Charge(Qg) | 5.3nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | SOT-23-3L | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 14pF | |
| Current - Continuous Drain(Id) | 2.5A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 1W | |
| RDS(on) | 280mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 440pF | |
| Gate Charge(Qg) | 5.3nC@10V |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Ultra-low gate charge
- RoHS-compliant devices available
- Excellent Cdv/dt immunity
- Advanced high cell density trench technology
C42372072 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |