Infineon/CYPRESS CY7C10212CV33-12BAXE

The CY7C10212CV33 is a high-performance CMOS static RAM organized as 65,536 words × 16 bits. The device features an automatic power-down function that significantly reduces power consumption when deselected. A write operation is performed by asserting Chip Enable (CE) and Write Enable (WE) inputs low. If Byte Low Enable (BLE) is low, data from the I/O pins (I/O0 to I/O7) is written to the location specified by the address pins (A0 to A15). If Byte High Enable (BHE) is low, data from the I/O pins (I/O8 to I/O15) is written to the location specified by the address pins (A0 to A15). A read operation is performed by asserting Chip Enable (CE) and Output Enable (OE) low while forcing Write Enable (WE) high. If Byte Low Enable (BLE) is low, data from the memory location specified by the address pins appears on I/O0 to I/O7. If Byte High Enable (BHE) is low, data from memory appears on I/O8 to I/O15. The input and output pins (I/O0 to I/O15) are in a high-impedance state when the device is deselected (CE high), output is disabled (OE high), BHE and BLE are disabled (BHE, BLE high), or during a write operation (CE low and WE low).

• Temperature range: Automotive-E: -40 °C to 125 °C
• Pin and function compatible with CY7C10212CV33
• High speed: tAA = 12 ns (Automotive-E)
• CMOS technology for optimized speed and power consumption
• Low active power: 325 mW (max)
• Automatic power-down on deselection
• Independent upper and lower byte control
• Available in lead-free 48-ball FBGA package