onsemi NTPF360N65S3H
| Manufacturer | |
| MPN | NTPF360N65S3H |
| LCSC Part # | C2902187 |
| Packaging | TO-220F |
| Customer # | |
| Key Attributes | MOSFET N-CH 650V 10A TO-220F |
| Datasheet | |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 26W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 360mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 916pF | |
| Gate Charge(Qg) | 17.5nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 26W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 360mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 916pF | |
| Gate Charge(Qg) | 17.5nC@10V | |
| Type | N-Channel |
Introduction
SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III FAST MOSFET series helps minimize various power systems and improve system efficiency.
Features
- 700 V (TJ = 150°C)
- Typ. RDS(on) = 296 mΩ
- Ultra Low Gate Charge (Typ. Qg = 17.5 nC)
- Low Effective Output Capacitance (Typ. C0ss(eff.) = 180 pF)
- 100% Avalanche Tested
- These Devices are Pb-Free and are RoHS Compliant
Applications
- Computing / Display Power Supplies
- Telecom / Server Power Supplies
- Industrial Power Supplies
- Lighting / Charger / Adapter
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.5769$ 1.0731 | $ 1.07 |
| 10+ | $ 3.0855$ 0.9257 | $ 9.26 |
| 50+ | $ 2.7925$ 0.8378 | $ 41.89 |
| 100+ | $ 2.4964$ 0.7490 | $ 74.90 |
| 500+ | $ 2.361$ 0.7083 | $ 354.15 |
| 1,000+ | $ 2.2996$ 0.6899 | $ 689.90 |
Standard Packaging50/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 26W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 360mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 916pF | |
| Gate Charge(Qg) | 17.5nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 26W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 360mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 916pF | |
| Gate Charge(Qg) | 17.5nC@10V | |
| Type | N-Channel |
Introduction
SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III FAST MOSFET series helps minimize various power systems and improve system efficiency.
Features
- 700 V (TJ = 150°C)
- Typ. RDS(on) = 296 mΩ
- Ultra Low Gate Charge (Typ. Qg = 17.5 nC)
- Low Effective Output Capacitance (Typ. C0ss(eff.) = 180 pF)
- 100% Avalanche Tested
- These Devices are Pb-Free and are RoHS Compliant
Applications
- Computing / Display Power Supplies
- Telecom / Server Power Supplies
- Industrial Power Supplies
- Lighting / Charger / Adapter
C2902187 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| SP11M65TG | Siliup | TO-220F | 1,895 | $ 0.5207 | ||
| STF18N65M2 | ST | TO-220FP | 66 | $ 1.2924 | ||
| FCPF360N65S3R0L-F154 | onsemi | TO-220F | 229 | $ 3.2426 | ||
| TSF70R360 | Truesemi | TO-220F | 26 | $ 0.8706 | ||
| TSF65R300 | Truesemi | TO-220F | 78 | $ 0.6759 | ||
| STFU16N65M2 | ST | TO-220FP | 3 | $ 1.9066 | ||
| FCPF360N65S3R0L | onsemi | TO-220F | 2 | $ 1.5978 | ||
| APC65R300FM | ALLPOWER | TO-220F | 537 | $ 1.311 | ||
| STF16N65M2 | ST | TO-220FP | 0 | $ 1.9204 | ||
| STFU13N65M2 | ST | TO-220FP | 0 | $ 1.3777 |



