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micron MT53E1G32D2FW-046 AUT:A product image
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micron MT53E1G32D2FW-046 AUT:ARoHS

Manufacturer
micron
MPN
MT53E1G32D2FW-046 AUT:A
LCSC Part #
C2889134
Packaging
VFBGA-200
Customer #
Key Attributes
32Gbit 1.06V~1.17V 2.133GHz LPDDR4X SDRAM VFBGA-200 Memory RoHS
Datasheetpdf iconmicron MT53E1G32D2FW-046 AUT:A
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QtyUnit Price(Reference Only)Total Amount
1+$ 85.0039$ 85.00
200+$ 32.8962$ 6579.24
500+$ 31.7405$ 15870.25
1,000+$ 31.1696$ 31169.60
Standard Packaging2000/Full Reel
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
Manufacturermicron
PackagingVFBGA-200
Operating Temperature-40℃~+125℃
FeaturesAuto self-refresh;Built-in temperature sensor;Auto precharge function;Write leveling function;ZQ calibration function
Refresh Current-
Memory Size32Gbit
Voltage - Supply1.06V~1.17V
Clock Frequency2.133GHz
Memory FormatLPDDR4X SDRAM
Current - Supply-
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Features

AI Translation
  • Ultra-low-voltage core and I/O power supplies – VDD1 = 1.70 - 1.95 V; 1.80 V nominal – VDD2 = 1.06 – 1.17 V; 1.10 V nominal – VDDQ = 1.06 – 1.17 V; 1.10 V nominal or low VDDQ = 0.57 - 0.65 V; 0.60 V nominal
  • Frequency range – 2133 – 10 MHz (data rate range: 4266 – 20 Mb/s per pin)
  • 16n prefetch DDR architecture
  • 8 internal banks per channel for concurrent operation
  • Single-data-rate CMD/ADR entry
  • Bidirectional/differential data strobe per byte lane
  • Programmable READ and WRITE latencies (RL/WL)
  • Programmable and on-the-fly burst lengths (BL = 16, 32)
  • Directed per-bank refresh for concurrent bank operation and ease of command scheduling
  • Up to 8.5 GB/s per die
  • On-chip temperature sensor to control self refresh rate
  • Partial-array self refresh (PASR)
  • Selectable output drive strength (DS)
  • Clock-stop capability
  • RoHS-compliant, “green” packaging
  • Programmable VSS (ODT) termination
  • Single-ended CK and DQS support
  • Improved tRFCab/tRFCpb = 280 ns/140 ns
  • AEC-Q100