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NCE NCEP020N85D

Produttore
NCEAsian Brands
Cod. Prod.
NCEP020N85D
Cod. LCSC
C2686643
Imballo
TO-263
Numero Cliente
Attr. chiave
85V 300A 4V 340W 2mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs
Scheda Tecnicapdf iconNCE NCEP020N85D
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
QtàPr. unit.(Solo per riferimento)Importo totale
1+$ 3.1889$ 3.19
10+$ 2.8066$ 28.07
30+$ 2.5688$ 77.06
100+$ 2.323$ 232.30
500+$ 2.2122$ 1106.10
800+$ 2.164$ 1731.20
Package Standard800/Full Reel
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ProduttoreNCE
ImballoTO-263
Operating Temperature-55℃~+175℃
Drain to Source Voltage85V
Configuration-
Current - Continuous Drain(Id)300A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation340W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)-
Gate Charge(Qg)245nC@10V
TypeN-Channel
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Descrizione

Traduzione AI

This series of devices utilizes Super Trench II technology, uniquely optimized to deliver high-efficiency, high-frequency switching performance. The extremely low RDS(ON) and QG combination minimizes both conduction and switching power losses. These devices are ideal for high-frequency switching and synchronous rectification.

Caratteristiche

Traduzione AI
  • VDS = 85V, ID = 300A
  • R DS(ON) = 1.8mΩ, typical (TO-220), VGS = 10V
  • R DS(ON) = 1.6mΩ, typical (TO-263), VGS = 10V
  • Excellent gate charge × RDS(on) product (Figure of Merit FOM)
  • Ultra-low on-resistance RDS(ON)
  • 175°C operating temperature
  • Lead-free lead finish
  • 100% tested for single pulse avalanche energy (UIS)!
  • 100% tested for \Delta Vds!

Applicazioni

Traduzione AI
  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous rectification