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Modelos EDAEasyEDA
TI CSD87335Q3DT
| Fabricante | |
| N.º de pieza fab. | CSD87335Q3DT |
| Nº LCSC | C133545 |
| Emb. | LSON-8(3.3x3.3) |
| Número de Cliente | |
| Atrib. clave | 30V 25A 6W 1.2V LSON-8(3.3x3.3) FET, MOSFET Arrays RoHS |
| Hoja de Datos |  TI CSD87335Q3DT |
| Componentes alternativos | 1 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Fabricante | TI | |
| Emb. | LSON-8(3.3x3.3) | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 25A | |
| Pd - Power Dissipation | 6W | |
| RDS(on) | - | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Type | - | |
| Configuration | Half-Bridge | |
| Reverse Transfer Capacitance (Crss@Vds) | 36pF | |
| Number | - | |
| Input Capacitance(Ciss) | 1.62nF | |
| Gate Charge(Qg) | 14nC@4.5V | |
| Operating Temperature | - | |
| Output Capacitance(Coss) | 1.02nF |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Fabricante | TI | |
| Emb. | LSON-8(3.3x3.3) | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 25A | |
| Pd - Power Dissipation | 6W | |
| RDS(on) | - | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Tipo | Descripción | |
|---|---|---|
| Type | - | |
| Configuration | Half-Bridge | |
| Reverse Transfer Capacitance (Crss@Vds) | 36pF | |
| Number | - | |
| Input Capacitance(Ciss) | 1.62nF | |
| Gate Charge(Qg) | 14nC@4.5V | |
| Operating Temperature | - | |
| Output Capacitance(Coss) | 1.02nF |
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Descripción
Traducción por IA
The CSD87335Q3D NexFET power module is optimized for synchronous buck applications, delivering high current, high efficiency, and high-frequency operation in a compact 3.3 mm × 3.3 mm package. Optimized for 5-V gate drive applications, it offers a flexible solution for high power density power supplies when paired with any 5-V gate drive from an external controller/driver.
Características
Traducción por IA
- Half-bridge power module
- Up to 27-V input voltage (VIN)
- 93.5% system efficiency at 15 A
- Up to 25-A operating current
- High-frequency operation (up to 1.5 MHz)
- High-density SON 3.3 mm × 3.3 mm package
- Optimized for 5-V gate drive
- Low switching losses
- Ultra-low inductance package
- RoHS compliant
- Halogen-free
- Lead-free terminal plating
Aplicaciones
Traducción por IA
- Synchronous buck converter
- High-frequency applications
- High-current, low duty cycle applications
- Multiphase synchronous buck converter
- Point-of-load (POL) DC-DC converter
- IMVP, VRM, and VRD applications
Agotado
Avisarme
Mínimo: 1Múltiplo: 1Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 3.9024 | $ 3.90 |
| 10+ | $ 3.8553 | $ 38.55 |
| 30+ | $ 3.8244 | $ 114.73 |
| 100+ | $ 3.7919 | $ 379.19 |
Encapsulado Estándar250/Full Reel | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Fabricante | TI | |
| Emb. | LSON-8(3.3x3.3) | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 25A | |
| Pd - Power Dissipation | 6W | |
| RDS(on) | - | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Type | - | |
| Configuration | Half-Bridge | |
| Reverse Transfer Capacitance (Crss@Vds) | 36pF | |
| Number | - | |
| Input Capacitance(Ciss) | 1.62nF | |
| Gate Charge(Qg) | 14nC@4.5V | |
| Operating Temperature | - | |
| Output Capacitance(Coss) | 1.02nF |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Fabricante | TI | |
| Emb. | LSON-8(3.3x3.3) | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 25A | |
| Pd - Power Dissipation | 6W | |
| RDS(on) | - | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Tipo | Descripción | |
|---|---|---|
| Type | - | |
| Configuration | Half-Bridge | |
| Reverse Transfer Capacitance (Crss@Vds) | 36pF | |
| Number | - | |
| Input Capacitance(Ciss) | 1.62nF | |
| Gate Charge(Qg) | 14nC@4.5V | |
| Operating Temperature | - | |
| Output Capacitance(Coss) | 1.02nF |
Reportar un errorMostrar productos similares (0) >
Descripción
Traducción por IA
The CSD87335Q3D NexFET power module is optimized for synchronous buck applications, delivering high current, high efficiency, and high-frequency operation in a compact 3.3 mm × 3.3 mm package. Optimized for 5-V gate drive applications, it offers a flexible solution for high power density power supplies when paired with any 5-V gate drive from an external controller/driver.
Características
Traducción por IA
- Half-bridge power module
- Up to 27-V input voltage (VIN)
- 93.5% system efficiency at 15 A
- Up to 25-A operating current
- High-frequency operation (up to 1.5 MHz)
- High-density SON 3.3 mm × 3.3 mm package
- Optimized for 5-V gate drive
- Low switching losses
- Ultra-low inductance package
- RoHS compliant
- Halogen-free
- Lead-free terminal plating
Aplicaciones
Traducción por IA
- Synchronous buck converter
- High-frequency applications
- High-current, low duty cycle applications
- Multiphase synchronous buck converter
- Point-of-load (POL) DC-DC converter
- IMVP, VRM, and VRD applications
C133545 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Componentes alternativos
| MPN | Fabricante | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|
| CSD87335Q3D | TI | LSON-8(3.3x3.3) | 0 | $ 3.1551 |