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onsemi FDM3622
| Manufacturer | |
| MPN | FDM3622 |
| LCSC Part # | C890886 |
| Packaging | WDFN-8(3.3x3.3) |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 4.4A WDFN-8(3.3x3.3) |
| Datasheet |  onsemi FDM3622 |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-8(3.3x3.3) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 4.4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.09nF | |
| Gate Charge(Qg) | 17nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-8(3.3x3.3) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 4.4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.09nF | |
| Gate Charge(Qg) | 17nC@10V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
AI Translation
- Max rDS(on)=60mΩ at VGS=10Vs , ΔD=4.4A
- Max rDS(on)=80mΩ at VGS=6.0V , ΔlD=3.8A
- Low Miller Charge
- Low QRR Body Diode
- Optimized efficiency at high frequencies
- UIS Capability (Single Pulse and Repetitive Pulse)
Applications
AI Translation
- Distributed Power Architectures and VRMs
- Primary Switch for 24V and 48V Systems
- High Voltage Synchronous Rectifier
- Formerly developmental type 82744
- MLP 3.3x3.3
In-Stock: 1,752
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.0146 | $ 2.01 |
| 10+ | $ 1.753 | $ 17.53 |
| 30+ | $ 1.6084 | $ 48.25 |
| 100+ | $ 1.446 | $ 144.60 |
| 500+ | $ 1.3729 | $ 686.45 |
| 1,000+ | $ 1.3404 | $ 1340.40 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-8(3.3x3.3) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 4.4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.09nF | |
| Gate Charge(Qg) | 17nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-8(3.3x3.3) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 4.4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.09nF | |
| Gate Charge(Qg) | 17nC@10V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
AI Translation
- Max rDS(on)=60mΩ at VGS=10Vs , ΔD=4.4A
- Max rDS(on)=80mΩ at VGS=6.0V , ΔlD=3.8A
- Low Miller Charge
- Low QRR Body Diode
- Optimized efficiency at high frequencies
- UIS Capability (Single Pulse and Repetitive Pulse)
Applications
AI Translation
- Distributed Power Architectures and VRMs
- Primary Switch for 24V and 48V Systems
- High Voltage Synchronous Rectifier
- Formerly developmental type 82744
- MLP 3.3x3.3
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| FDMC2610 | onsemi | WDFN-8(3.3x3.3) | 8 | $ 6.3117 | ||
| RQ3P300BHTB1 | ROHM | HSMT-8(3.2x3) | 2 | $ 3.3878 | ||
| SISS5110DN-T1-GE3 | VISHAY | PowerPAK1212-8S | 8 | $ 1.5386 | ||
| BSZ160N10NS3G | Infineon | TSDSON-8(3.3x3.3) | 0 | $ 0.9358 | ||
| RH6P040BHTB1 | ROHM | HSMT-8(3x3.2) | 0 | $ 1.8537 | ||
| FDMC2674 | onsemi | DFN-8(3.3x3.3) | 0 | $ 0.8938 | ||
| SI7322ADN-T1-GE3 | VISHAY | PowerPAK1212-8 | 0 | $ 1.2413 | ||
| CSD19538Q3AT | TI | VSONP-8(3.3x3.3) | 0 | $ 0.583 | ||
| SISS92DN-T1-GE3 | VISHAY | PowerPAK1212-8S | 0 | $ 0.975 | ||
| FDMC3612-L701 | onsemi | WDFN-8(3.3x3.3) | 0 | $ 0.5692 |