pSemi PE42359SCAA

The PE42359 UltraCMOS RF switch is designed for a wide range of applications covering 10 MHz to 3 GHz. This reflective switch integrates on-board CMOS control logic with a low-voltage CMOS-compatible control interface, and can be controlled using single-pin or complementary control inputs. With a nominal +3V supply voltage, the typical input 1 dB compression point reaches +33.5 dBm. The PE42359 also meets the quality and performance standards for automotive applications and is AEC-Q100 Grade 2 certified. The PE42359 is manufactured using pSemi's UltraCMOS process, a patented variant of silicon-on-insulator (SOI) technology on a sapphire substrate that delivers GaAs-level performance with the cost-effectiveness and integration advantages of CMOS.

• AEC-Q100 Grade 2 qualified, operating temperature up to +105℃
• Single or complementary CMOS logic control input
• Low insertion loss: 0.35 dB at 1000 MHz, 0.50 dB at 2000 MHz
• 30 dB isolation at 1000 MHz
• High ESD tolerance up to 2 kV HBM
• Typical input 1 dB compression point of +33.5 dBm
• Minimum supply voltage 1.8V