Hangzhou Silan Microelectronics SVF14N65CFJ
| Fabricante | Hangzhou Silan MicroelectronicsAsian Brands |
| N.º de pieza fab. | SVF14N65CFJ |
| Nº LCSC | C601615 |
| Emb. | TO-220 |
| Número de Cliente | |
| Atrib. clave | 650V 14A 2V 45W 600mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS |
| Hoja de Datos |
Especificaciones del Producto
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Hangzhou Silan Microelectronics | |
| Emb. | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 14A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 45W | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.2pF | |
| RDS(on) | 600mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.67nF | |
| Gate Charge(Qg) | 32.5nC@10V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Hangzhou Silan Microelectronics | |
| Emb. | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 14A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 45W | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.2pF | |
| RDS(on) | 600mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.67nF | |
| Gate Charge(Qg) | 32.5nC@10V |
Descripción
SVF14N65CFJ is an N-channel enhancement-mode power MOSFET fabricated using Silan's proprietary F-Cell structure VDMOS technology. The improved process and cell structure are specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are widely used in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drives.
Características
- 14A, 650V, R<sub>DS(on)</sub> (typ.) = 0.6 Ω @ V<sub>GS</sub> = 10 V
- Low gate charge
- Low C<sub>rss</sub>
- Fast switching
- Improved dv/dt capability
Aplicaciones
- AC-DC power supply
- DC-DC converter
- H-bridge PWM motor driver
| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 1.4411 | $ 1.44 |
| 10+ | $ 1.2445 | $ 12.45 |
| 50+ | $ 1.147 | $ 57.35 |
| 100+ | $ 1.0496 | $ 104.96 |
| 500+ | $ 0.9911 | $ 495.55 |
| 1,000+ | $ 0.9602 | $ 960.20 |
Encapsulado Estándar50/Full Tube | ||
Especificaciones del Producto
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Hangzhou Silan Microelectronics | |
| Emb. | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 14A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 45W | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.2pF | |
| RDS(on) | 600mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.67nF | |
| Gate Charge(Qg) | 32.5nC@10V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Hangzhou Silan Microelectronics | |
| Emb. | TO-220 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 14A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 45W | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.2pF | |
| RDS(on) | 600mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.67nF | |
| Gate Charge(Qg) | 32.5nC@10V |
Descripción
SVF14N65CFJ is an N-channel enhancement-mode power MOSFET fabricated using Silan's proprietary F-Cell structure VDMOS technology. The improved process and cell structure are specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are widely used in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drives.
Características
- 14A, 650V, R<sub>DS(on)</sub> (typ.) = 0.6 Ω @ V<sub>GS</sub> = 10 V
- Low gate charge
- Low C<sub>rss</sub>
- Fast switching
- Improved dv/dt capability
Aplicaciones
- AC-DC power supply
- DC-DC converter
- H-bridge PWM motor driver
C601615 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



