Images for reference only
EDA ModelsEasyEDA
Infineon IPI530N15N3 G
| Manufacturer | |
| MPN | IPI530N15N3 G |
| LCSC Part # | C536985 |
| Packaging | TO-262-3 |
| Customer # | |
| Key Attributes | 150V 21A 4V 68W 53mΩ@10V 1 N-channel TO-262-3 Single FETs, MOSFETs RoHS |
| Datasheet |  Infineon IPI530N15N3 G |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-262-3 | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 21A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 68W | |
| RDS(on) | 53mΩ@10V | |
| Number | 1 N-channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-262-3 | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 21A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 68W | |
| RDS(on) | 53mΩ@10V | |
| Number | 1 N-channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- N-channel, normally-on
- Excellent gate charge × on-resistance RDS(on) product (figure of merit FOM)
- Ultra-low on-resistance RDS(on)
- Operating temperature up to 175 °C
- Lead-free lead finish; RoHS compliant; halogen-free
- Qualified to JEDEC standards for target applications
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free per IEC61249-2-21
Out of Stock
Notify Me
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.8028 | $ 1.80 |
| 200+ | $ 0.6977 | $ 139.54 |
| 500+ | $ 0.6745 | $ 337.25 |
| 1,000+ | $ 0.6622 | $ 662.20 |
Standard Packaging500/Full Tube | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-262-3 | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 21A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 68W | |
| RDS(on) | 53mΩ@10V | |
| Number | 1 N-channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-262-3 | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 21A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 68W | |
| RDS(on) | 53mΩ@10V | |
| Number | 1 N-channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- N-channel, normally-on
- Excellent gate charge × on-resistance RDS(on) product (figure of merit FOM)
- Ultra-low on-resistance RDS(on)
- Operating temperature up to 175 °C
- Lead-free lead finish; RoHS compliant; halogen-free
- Qualified to JEDEC standards for target applications
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free per IEC61249-2-21
C536985 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| STI47N60DM6AG | ST | I2PAK(TO-262) | 1 | $ 8.9586 | ||
| IPI600N25N3 G | Infineon | TO-262-3 | 0 | $ 3.4833 | ||
| VBN1206N | VBsemi Elec | TO-262 | 0 | $ 2.0824 | ||
| IPI320N203G | Infineon | TO-262-3 | 0 | $ 1.9102 | ||
| SPI21N50C3 | Infineon | TO-262-3 | 0 | $ 4.099 | ||
| FCI25N60N-F102 | onsemi | TO-262-3 | 0 | $ 3.951 | ||
| STI33N65M2 | ST | I2PAK | 0 | $ 2.8947 | ||
| VBN1204N | VBsemi Elec | TO-262 | 0 | $ 2.0824 | ||
| IPI60R165CP | Infineon | TO-262-3 | 0 | $ 2.4722 | ||
| AOWF125A60 | AOS | TO-262F | 0 | $ 3.0693 |