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Infineon AUIRF4905
| Manufacturer | |
| MPN | AUIRF4905 |
| LCSC Part # | C533263 |
| Packaging | TO-220AB |
| Customer # | |
| Key Attributes | MOSFET N-CH 55V 74A TO-220AB |
| Datasheet |  Infineon AUIRF4905 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 74A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 640pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.4nF | |
| Gate Charge(Qg) | 180nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 74A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 640pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.4nF | |
| Gate Charge(Qg) | 180nC@10V |
Introduction
Specifically designed for Automotive applications, this cellular design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Features
- Advanced Planar Technology
- Low On-Resistance
- Dynamic dV/dT Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, RoHS Compliant Automotive Qualified
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 7.9385 | $ 7.94 |
Standard Packaging1000/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 74A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 640pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.4nF | |
| Gate Charge(Qg) | 180nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 74A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 640pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.4nF | |
| Gate Charge(Qg) | 180nC@10V |
Introduction
Specifically designed for Automotive applications, this cellular design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Features
- Advanced Planar Technology
- Low On-Resistance
- Dynamic dV/dT Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, RoHS Compliant Automotive Qualified
C533263 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| AUIRF3205 | Infineon | TO-220AB | 1 | $ 5.2786 | ||
| IRF3007PBF | Infineon | TO-220AB | 5 | $ 3.4261 | ||
| CMP1405 | Cmos | TO-220 | 22 | $0.5279 $0.5556 | ||
| MPG180N10P | Minos | TO-220 | 46 | $ 1.0545 | ||
| SP010N04BGTQ | Siliup | TO-220-3L | 68 | $ 0.5423 | ||
| NTE2991 | NTE Electronics | TO-220 | 0 | $ 7.5962 | ||
| AOT66919L | AOS | TO-220 | 0 | $ 1.407 | ||
| IPP085N06LGIN | Infineon | TO-220-3 | 0 | $ 0.7962 | ||
| IPP085N06LGAKSA1 | Infineon | TO-220-3 | 0 | $ 0.7962 | ||
| AUIRL3705N | Infineon | TO-220AB | 0 | $ 1.5353 |