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HUASHUO HSP0139RoHS

Manufacturer
HUASHUOAsian Brands
MPN
HSP0139
LCSC Part #
C508809
Packaging
TO-220
Customer #
Key Attributes
MOSFET P-CH 100V 35A TO-220
Datasheetpdf iconHUASHUO HSP0139
Alternative Parts3
In-Stock: 102
102 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.8122$ 0.81
10+$ 0.6722$ 6.72
50+$ 0.5404$ 27.02
100+$ 0.4704$ 47.04
500+$ 0.4297$ 214.85
1,000+$ 0.4069$ 406.90
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHUASHUO
PackagingTO-220
Operating Temperature-55℃~+150℃
Drain to Source Voltage100V
Current - Continuous Drain(Id)35A
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)125pF
RDS(on)55mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)6.516nF
Gate Charge(Qg)92nC@10V

Introduction

AI Translation

HSP0139 utilizes advanced trench MOSFET technology, delivering excellent RDS(ON) and gate charge for a wide range of applications. HSP0139 complies with RoHS and green product requirements, is 100% guaranteed avalanche-rated, and has passed full-function reliability qualification.

Features

AI Translation
  • 100% guaranteed avalanche ruggedness
  • Green/RoHS-compliant devices available
  • Ultra-low gate charge
  • Excellent dV/dt immunity
  • Advanced high cell density trench technology

Alternative Parts

MPNManufacturerPackagingAvailabilityUnit Price
HSP40P15HUASHUOTO-220416$ 0.9245
HSP80P10HUASHUOTO-2201$ 1.2256
HSP0195AHUASHUOTO-220146$ 1.1645