NCE NCEP1545K
| Producent | NCEAsian Brands |
| Nr części prod. | NCEP1545K |
| Nr LCSC | C503030 |
| Opak. | TO-252-2L |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 150V 45A TO-252-2L |
| Karta Katalogowa |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | NCE | |
| Opak. | TO-252-2L | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 45A | |
| Gate Threshold Voltage (Vgs(th)) | 3.1V | |
| Pd - Power Dissipation | 130W | |
| Reverse Transfer Capacitance (Crss@Vds) | 11.7pF | |
| RDS(on) | 24mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.3nF | |
| Gate Charge(Qg) | 21.1nC@75V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | NCE | |
| Opak. | TO-252-2L | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 45A | |
| Gate Threshold Voltage (Vgs(th)) | 3.1V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 130W | |
| Reverse Transfer Capacitance (Crss@Vds) | 11.7pF | |
| RDS(on) | 24mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.3nF | |
| Gate Charge(Qg) | 21.1nC@75V |
Zgłoś błądPokaż podobne produkty (0) >
Opis
Tłumaczenie AI
The NCEP1545K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
Funkcje
Tłumaczenie AI
- VDS = 150V, ID = 45A
- RDS(ON) = 24mΩ (typical) @ VGs = 10V
- Excellent gate charge x RDS(on) product(FOM)
- Very low on-resistance RDS(on)
- 175 °C operating temperature
- Pb-free lead plating
- 100% UIS tested
Zastosowania
Tłumaczenie AI
- LED backlighting
- Ideal for high-frequency switching and synchronous rectification
Na stanie: 6
6 W magazynie, wysyłka natychmiastowa
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 0.8367 | $ 0.84 |
| 10+ | $ 0.6613 | $ 6.61 |
| 30+ | $ 0.5735 | $ 17.21 |
| 100+ | $ 0.4858 | $ 48.58 |
| 500+ | $ 0.4338 | $ 216.90 |
| 1,000+ | $ 0.4062 | $ 406.20 |
Standardowa Obudowa2500/Full Reel | ||
Lepsza cena za większą ilość?
$
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | NCE | |
| Opak. | TO-252-2L | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 45A | |
| Gate Threshold Voltage (Vgs(th)) | 3.1V | |
| Pd - Power Dissipation | 130W | |
| Reverse Transfer Capacitance (Crss@Vds) | 11.7pF | |
| RDS(on) | 24mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.3nF | |
| Gate Charge(Qg) | 21.1nC@75V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | NCE | |
| Opak. | TO-252-2L | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 45A | |
| Gate Threshold Voltage (Vgs(th)) | 3.1V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 130W | |
| Reverse Transfer Capacitance (Crss@Vds) | 11.7pF | |
| RDS(on) | 24mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.3nF | |
| Gate Charge(Qg) | 21.1nC@75V |
Zgłoś błądPokaż podobne produkty (0) >
Opis
Tłumaczenie AI
The NCEP1545K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
Funkcje
Tłumaczenie AI
- VDS = 150V, ID = 45A
- RDS(ON) = 24mΩ (typical) @ VGs = 10V
- Excellent gate charge x RDS(on) product(FOM)
- Very low on-resistance RDS(on)
- 175 °C operating temperature
- Pb-free lead plating
- 100% UIS tested
Zastosowania
Tłumaczenie AI
- LED backlighting
- Ideal for high-frequency switching and synchronous rectification
C503030 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
