- Rozkład pinów
- Obudowa
Infineon BSP135IXTSA1
| Producent | |
| Nr części prod. | BSP135IXTSA1 |
| Nr LCSC | C3288806 |
| Opak. | SOT-223-4 |
| Numer Klienta | |
| Klucz. cechy | N-channel, Current:0.12A, Voltage:600V |
| Karta Katalogowa |  Infineon BSP135IXTSA1 |
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | SOT-223-4 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 8.5pF | |
| Current - Continuous Drain(Id) | 120mA | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.4pF | |
| RDS(on) | 25Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 98pF | |
| Gate Charge(Qg) | 3.7nC@5V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | SOT-223-4 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 8.5pF | |
| Current - Continuous Drain(Id) | 120mA | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 1.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.4pF | |
| RDS(on) | 25Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 98pF | |
| Gate Charge(Qg) | 3.7nC@5V | |
| Type | N-Channel |
Opis
The IPDQ60R010S7 offers the best cost-performance ratio for low-frequency switching applications. As a high-voltage superjunction MOSFET, CoolMOS™ S7 features an ultra-low on-resistance RDS(on), significantly improving energy efficiency. CoolMOS™ S7 is optimized for "static switching" and high-current applications, making it ideal for solid-state relay and circuit breaker designs, as well as line rectification in SMPS and inverter topologies.
Funkcje
- N-channel
- Depletion mode
- Rated dv/dt
- Halogen-free per IEC61249-2-21
- Lead-free terminal plating; RoHS compliant
Zastosowania
- Solid state relays and circuit breakers
- Diode bridge parallel/replacement in line rectification for high-power/high-performance applications such as computers, telecommunications, UPS, and solar
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 0.8481 | $ 0.85 |
| 10+ | $ 0.8351 | $ 8.35 |
| 30+ | $ 0.8286 | $ 24.86 |
| 100+ | $ 0.8205 | $ 82.05 |
Standardowa Obudowa1000/Full Reel | ||
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | SOT-223-4 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 8.5pF | |
| Current - Continuous Drain(Id) | 120mA | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.4pF | |
| RDS(on) | 25Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 98pF | |
| Gate Charge(Qg) | 3.7nC@5V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | SOT-223-4 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 8.5pF | |
| Current - Continuous Drain(Id) | 120mA | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 1.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.4pF | |
| RDS(on) | 25Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 98pF | |
| Gate Charge(Qg) | 3.7nC@5V | |
| Type | N-Channel |
Opis
The IPDQ60R010S7 offers the best cost-performance ratio for low-frequency switching applications. As a high-voltage superjunction MOSFET, CoolMOS™ S7 features an ultra-low on-resistance RDS(on), significantly improving energy efficiency. CoolMOS™ S7 is optimized for "static switching" and high-current applications, making it ideal for solid-state relay and circuit breaker designs, as well as line rectification in SMPS and inverter topologies.
Funkcje
- N-channel
- Depletion mode
- Rated dv/dt
- Halogen-free per IEC61249-2-21
- Lead-free terminal plating; RoHS compliant
Zastosowania
- Solid state relays and circuit breakers
- Diode bridge parallel/replacement in line rectification for high-power/high-performance applications such as computers, telecommunications, UPS, and solar
C3288806 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |