Infineon FF900R12IE4V
| Manufacturer | |
| MPN | FF900R12IE4V |
| LCSC Part # | C3198705 |
| Packaging | - |
| Customer # | |
| Key Attributes | 5.1kW 900A 1.2kV FS (Field Stop) Single IGBTs RoHS |
| Datasheet | |
| RoHS Compliance | 1 documents available |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Td(off) | - | |
| Pd - Power Dissipation | 5.1kW | |
| Td(on) | - | |
| Current - Collector(Ic) | 900A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 3nF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.05V@15V,900A | |
| Operating Temperature | -40℃~+150℃ | |
| Vce Saturation(VCE(sat)) | - | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 54nF@25V | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | 6.4uC@15V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Td(off) | - | |
| Pd - Power Dissipation | 5.1kW | |
| Td(on) | - | |
| Current - Collector(Ic) | 900A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 3nF | |
| IGBT Type | FS (Field Stop) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.05V@15V,900A | |
| Operating Temperature | -40℃~+150℃ | |
| Vce Saturation(VCE(sat)) | - | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 54nF@25V | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | 6.4uC@15V |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Extended operating junction temperature Tvjop
- High DC stability
- High short-circuit capability, self-limiting short-circuit current
- Low switching losses
- Outstanding robustness
- VCEsat with positive temperature coefficient
- 4kV AC 1-minute isolation voltage
- Package with CTI > 400
- High creepage and clearance distances
- High power and thermal cycling capability
- High power density
- Substrate for low thermal resistance
- V_CES = 1200V
- I_Cnom = 900A / I_CRM = 1800A
Applications
AI Translation
- Hybrid commercial vehicles
- Commercial agricultural vehicles
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 584.3194 | $ 584.32 |
| 200+ | $ 547.0738 | $ 109414.76 |
| 500+ | $ 527.8485 | $ 263924.25 |
| 1,000+ | $ 518.3485 | $ 518348.50 |
Standard Packaging3/Full Bag | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Td(off) | - | |
| Pd - Power Dissipation | 5.1kW | |
| Td(on) | - | |
| Current - Collector(Ic) | 900A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 3nF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.05V@15V,900A | |
| Operating Temperature | -40℃~+150℃ | |
| Vce Saturation(VCE(sat)) | - | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 54nF@25V | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | 6.4uC@15V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Td(off) | - | |
| Pd - Power Dissipation | 5.1kW | |
| Td(on) | - | |
| Current - Collector(Ic) | 900A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 3nF | |
| IGBT Type | FS (Field Stop) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.05V@15V,900A | |
| Operating Temperature | -40℃~+150℃ | |
| Vce Saturation(VCE(sat)) | - | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 54nF@25V | |
| Output Capacitance(Coes) | - | |
| Gate Charge(Qg) | 6.4uC@15V |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Extended operating junction temperature Tvjop
- High DC stability
- High short-circuit capability, self-limiting short-circuit current
- Low switching losses
- Outstanding robustness
- VCEsat with positive temperature coefficient
- 4kV AC 1-minute isolation voltage
- Package with CTI > 400
- High creepage and clearance distances
- High power and thermal cycling capability
- High power density
- Substrate for low thermal resistance
- V_CES = 1200V
- I_Cnom = 900A / I_CRM = 1800A
Applications
AI Translation
- Hybrid commercial vehicles
- Commercial agricultural vehicles
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |

