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EDA ModelsEasyEDA
onsemi FDMC510P-F106
| Manufacturer | |
| MPN | FDMC510P-F106 |
| LCSC Part # | C890934 |
| Packaging | WDFN-8(3.3x3.3) |
| Customer # | |
| Key Attributes | 20V 18A 400mV 41W 1 P-Channel WDFN-8(3.3x3.3) Single FETs, MOSFETs RoHS |
| Datasheet |  onsemi FDMC510P-F106 |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-8(3.3x3.3) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 400mV | |
| Pd - Power Dissipation | 41W | |
| RDS(on) | - | |
| Number | 1 P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-8(3.3x3.3) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 400mV | |
| Pd - Power Dissipation | 41W | |
| RDS(on) | - | |
| Number | 1 P-Channel |
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Introduction
AI Translation
This P−Channel MOSFET is produce using onsemi’s advanced POWERTRENCH process that has been optimized for rDS(ON), switching performance and ruggedness.
Features
AI Translation
- Max rDS(on)=8.0 mΩ at VGS=-4.5 V, ID=-12 A
- Max rDS(on)=9.8 mΩ at VGS=-2.5 V, ID=-10 A
- Max rDS(on)=13 mΩ at VGS=-1.8 V, ID=-9.3 A
- Max rDS(on)=17 mΩ at VGS=-1.5 V, ID=-8.3 A
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability in a Widely Used Surface Mount Package
- 100% UIL Tested
- HBM ESD Capability Level >2 kV Typical
- This Device is Pb−Free, Halide Free and is RoHS Compliant
Applications
AI Translation
- Battery Management
- Load Switch
Out of Stock
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.3747 | $ 0.37 |
| 10+ | $ 0.2961 | $ 2.96 |
| 30+ | $ 0.2621 | $ 7.86 |
| 100+ | $ 0.2205 | $ 22.05 |
| 500+ | $ 0.202 | $ 101.00 |
| 1,000+ | $ 0.1912 | $ 191.20 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-8(3.3x3.3) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 400mV | |
| Pd - Power Dissipation | 41W | |
| RDS(on) | - | |
| Number | 1 P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-8(3.3x3.3) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 400mV | |
| Pd - Power Dissipation | 41W | |
| RDS(on) | - | |
| Number | 1 P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This P−Channel MOSFET is produce using onsemi’s advanced POWERTRENCH process that has been optimized for rDS(ON), switching performance and ruggedness.
Features
AI Translation
- Max rDS(on)=8.0 mΩ at VGS=-4.5 V, ID=-12 A
- Max rDS(on)=9.8 mΩ at VGS=-2.5 V, ID=-10 A
- Max rDS(on)=13 mΩ at VGS=-1.8 V, ID=-9.3 A
- Max rDS(on)=17 mΩ at VGS=-1.5 V, ID=-8.3 A
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability in a Widely Used Surface Mount Package
- 100% UIL Tested
- HBM ESD Capability Level >2 kV Typical
- This Device is Pb−Free, Halide Free and is RoHS Compliant
Applications
AI Translation
- Battery Management
- Load Switch
C890934 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| SI7615ADN-T1-GE3 | VISHAY | PowerPAK1212-8 | 776 | $ 0.6283 | ||
| SIS447DN-T1-GE3 | VISHAY | PowerPAK1212-8 | 172 | $0.4200 $0.506 | ||
| FDMC510P | onsemi | WDFN-8(3.3x3.3) | 87 | $ 1.6278 | ||
| SISH615ADN-T1-GE3 | VISHAY | PowerPAK1212-8 | 5 | $ 1.0187 | ||
| SIS407DN-T1-GE3 | VISHAY | PowerPAK1212-8 | 1,761 | $ 0.6898 | ||
| FDMC6679AZ | onsemi | WDFN-8(3.3x3.3) | 115 | $ 0.7756 | ||
| SIS415DNT-T1-GE3 | VISHAY | PowerPAK1212-8S | 19 | $ 0.9277 | ||
| CMSC6683 | Cmos | DFN-8(3.3x3.3) | 0 | $0.2638 $0.2776 | ||
| SIS435DNT-T1-GE3 | VISHAY | PowerPAK1212-8 | 0 | $ 0.8518 | ||
| SI7623DN-T1-GE3 | VISHAY | PowerPAK1212-8 | 0 | $ 0.8335 |