onsemi FDMA3023PZ
| Manufacturer | |
| MPN | FDMA3023PZ |
| LCSC Part # | C890895 |
| Packaging | VDFN-6(2x2) |
| Customer # | |
| Key Attributes | MOSFET P-CH ARR 30V 2.9A VDFN-6(2x2) |
| Datasheet | |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | VDFN-6(2x2) | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 2.9A | |
| Pd - Power Dissipation | 700mW | |
| RDS(on) | 90mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 530pF | |
| Gate Charge(Qg) | 11nC@4.5V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | VDFN-6(2x2) | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 2.9A | |
| Pd - Power Dissipation | 700mW | |
| RDS(on) | 90mΩ@4.5V |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 530pF | |
| Gate Charge(Qg) | 11nC@4.5V | |
| Operating Temperature | -55℃~+150℃ |
Introduction
This device is designed for battery charging switch applications in mobile phones and other ultra-portable devices, offering a single-package solution. It integrates two independent P-channel MOSFETs with low on-resistance to minimize conduction losses. When connected in a typical common-source configuration, bidirectional current flow is achieved. The MicroFET 2X2 package delivers excellent thermal performance for its physical size, making it ideal for linear-mode applications.
Features
- Maximum rDS(on) = 90 mΩ at VGS = -4.5 V, ID = -2.9 A
- Maximum rDS(on) = 130 mΩ at VGS = -2.5 V, ID = -2.6 A
- Maximum rDS(on) = 170 mΩ at VGS = -1.8 V, ID = -1.7 A
- Maximum rDS(on) = 240 mΩ at VGS = -1.5 V, ID = -1.0 A
- New MicroFET 2x2 mm package with thickness as low as 0.8 mm maximum
- RoHS compliant
- Halogen-free and antimony oxide-free
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.8287 | $ 1.83 |
| 10+ | $ 1.5375 | $ 15.38 |
| 30+ | $ 1.3551 | $ 40.65 |
| 100+ | $ 1.1681 | $ 116.81 |
| 500+ | $ 1.0838 | $ 541.90 |
| 1,000+ | $ 1.047 | $ 1047.00 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | VDFN-6(2x2) | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 2.9A | |
| Pd - Power Dissipation | 700mW | |
| RDS(on) | 90mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 530pF | |
| Gate Charge(Qg) | 11nC@4.5V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | VDFN-6(2x2) | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 2.9A | |
| Pd - Power Dissipation | 700mW | |
| RDS(on) | 90mΩ@4.5V |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 530pF | |
| Gate Charge(Qg) | 11nC@4.5V | |
| Operating Temperature | -55℃~+150℃ |
Introduction
This device is designed for battery charging switch applications in mobile phones and other ultra-portable devices, offering a single-package solution. It integrates two independent P-channel MOSFETs with low on-resistance to minimize conduction losses. When connected in a typical common-source configuration, bidirectional current flow is achieved. The MicroFET 2X2 package delivers excellent thermal performance for its physical size, making it ideal for linear-mode applications.
Features
- Maximum rDS(on) = 90 mΩ at VGS = -4.5 V, ID = -2.9 A
- Maximum rDS(on) = 130 mΩ at VGS = -2.5 V, ID = -2.6 A
- Maximum rDS(on) = 170 mΩ at VGS = -1.8 V, ID = -1.7 A
- Maximum rDS(on) = 240 mΩ at VGS = -1.5 V, ID = -1.0 A
- New MicroFET 2x2 mm package with thickness as low as 0.8 mm maximum
- RoHS compliant
- Halogen-free and antimony oxide-free
C890895 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| PJM04DP30DFA | PJSEMI | DFN2x2A-6L | 1,380 | $ 0.1089 | ||
| SiA923EDJ-T1-GE3-VB | VBsemi Elec | DFN-6(2x2) | 73 | $0.3739 $0.4398 | ||
| SiA929DJ-T1-GE3-VB | VBsemi Elec | DFN-6(2x2) | 26 | $0.3901 $0.4589 | ||
| FDMA3023PZ-VB | VBsemi Elec | DFN-6(2x2) | 3 | $0.4690 $0.5517 | ||
| FDMA3027PZ | onsemi | VDFN-6(2x2) | 0 | $ 1.1453 | ||
| PMDPB70XP,115 | Nexperia | DFN2020-6(2x2) | 0 | $ 0.3281 | ||
| IRFHS9351TRPBF-VB | VBsemi Elec | DFN-6(2x2) | 0 | $0.5541 $0.5832 | ||
| SiA907EDJT-T1-GE3-VB | VBsemi Elec | DFN-6-EP(2x2) | 0 | $ 0.5755 | ||
| SiA911ADJ-T1-GE3-VB | VBsemi Elec | DFN-6-EP(2x2) | 0 | $ 0.5755 | ||
| SiA915DJ-T1-GE3-VB | VBsemi Elec | DFN-6-EP(2x2) | 0 | $ 0.5755 |

