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onsemi FDN340P
| Manufacturer | |
| MPN | FDN340P |
| LCSC Part # | C75469 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET P-CH 20V SOT-23 |
| Datasheet |  onsemi FDN340P |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 121pF | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 56pF | |
| RDS(on) | 70mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 779pF | |
| Gate Charge(Qg) | 7.2nC@4.5V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 121pF | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 56pF | |
| RDS(on) | 70mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 779pF | |
| Gate Charge(Qg) | 7.2nC@4.5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This P-Channel Logic Level MOSFET is produced using advanced Power Trench process that has been especially taliored to minimize the on-state resistance and yet maintain low gate charge for superior swtiching performance.
Features
AI Translation
- –2A, 20 V; RDS(ON)=70 mΩ @ VGS=-4.5 V; RDS(ON)=110 mΩ @ VGS=-2.5 V
- Low gate charge (7.2 nC typical)
- Highperformance trench technology for extremely low RDS(ON)
- High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capablitiy
Applications
AI Translation
- portable electronics applications
- load swtiching and power management
- battery charging circutis
- DC/DC conversion
In-Stock: 9,270
9,270 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2094 | $ 1.05 |
| 50+ | $ 0.1669 | $ 8.35 |
| 150+ | $ 0.1486 | $ 22.29 |
| 500+ | $ 0.1259 | $ 62.95 |
| 3,000+ | $ 0.1006 | $ 301.80 |
| 6,000+ | $ 0.0946 | $ 567.60 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 121pF | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 56pF | |
| RDS(on) | 70mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 779pF | |
| Gate Charge(Qg) | 7.2nC@4.5V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 121pF | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 56pF | |
| RDS(on) | 70mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 779pF | |
| Gate Charge(Qg) | 7.2nC@4.5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
This P-Channel Logic Level MOSFET is produced using advanced Power Trench process that has been especially taliored to minimize the on-state resistance and yet maintain low gate charge for superior swtiching performance.
Features
AI Translation
- –2A, 20 V; RDS(ON)=70 mΩ @ VGS=-4.5 V; RDS(ON)=110 mΩ @ VGS=-2.5 V
- Low gate charge (7.2 nC typical)
- Highperformance trench technology for extremely low RDS(ON)
- High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capablitiy
Applications
AI Translation
- portable electronics applications
- load swtiching and power management
- battery charging circutis
- DC/DC conversion
C75469 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| FDN340P | onsemi | SOT-23 | 490 | $0.0761 $0.3306 | ||
| SP2301T2 | Siliup | SOT-23 | 4,140 | $0.0289 $0.0304 | ||
| FDN302P | onsemi | SOT-23-3 | 2,050 | $ 0.3435 | ||
| PMV65XP,215 | Nexperia | SOT-23 | 43,840 | $ 0.0705 | ||
| FDN302P | Slkor | SOT-23 | 150 | $0.0210 $0.0419 | ||
| SI2305 | YONGYUTAI | SOT-23 | 3,240 | $ 0.0386 | ||
| PMV250EPEAR-JSM | JSMSEMI | SOT-23 | 4,670 | $ 0.059 | ||
| JSM5P04G | JSMSEMI | SOT-23 | 2,550 | $ 0.0413 | ||
| PMV65XPVL | Nexperia | SOT-23 | 0 | $ 0.58 | ||
| FDN342P | onsemi | SOT-23 | 0 | $ 0.1947 |