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VISHAY SIHFS11N50A-GE3
| Manufacturer | |
| MPN | SIHFS11N50A-GE3 |
| LCSC Part # | C7316158 |
| Packaging | D2PAK(TO-263) |
| Customer # | |
| Key Attributes | 500V 11A 4V 170W 520mΩ@10V 1 N-channel D2PAK(TO-263) Single FETs, MOSFETs |
| Datasheet |  VISHAY SIHFS11N50A-GE3 |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | D2PAK(TO-263) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 170W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.1pF | |
| RDS(on) | 520mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.423nF | |
| Gate Charge(Qg) | 52nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | D2PAK(TO-263) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 170W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.1pF | |
| RDS(on) | 520mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.423nF | |
| Gate Charge(Qg) | 52nC@10V |
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Introduction
AI Translation
The RM78N100LD employs super trench technology, uniquely optimized to deliver the highest efficiency high-frequency switching performance. With extremely low drain-source on-resistance (RDS(ON)) and gate charge (Qg), both conduction and switching power losses are minimized. This device is ideal for high-frequency switching and synchronous rectification applications.
Features
AI Translation
- Low Gate Charge Q9 results in Simple Drive Requirement R
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Effective Coss Specified
- RoHS Available HALOGEN FREE Available
Applications
AI Translation
- Switch Mode Power Supply (SMPS)
- Uninterruptible Power Supply
- High Speed Power Switching
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 2.2807 | $ 2.28 |
| 200+ | $ 0.9108 | $ 182.16 |
| 500+ | $ 0.8805 | $ 440.25 |
| 1,000+ | $ 0.8653 | $ 865.30 |
Standard Packaging1000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | D2PAK(TO-263) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 170W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.1pF | |
| RDS(on) | 520mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.423nF | |
| Gate Charge(Qg) | 52nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | D2PAK(TO-263) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 170W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.1pF | |
| RDS(on) | 520mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.423nF | |
| Gate Charge(Qg) | 52nC@10V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The RM78N100LD employs super trench technology, uniquely optimized to deliver the highest efficiency high-frequency switching performance. With extremely low drain-source on-resistance (RDS(ON)) and gate charge (Qg), both conduction and switching power losses are minimized. This device is ideal for high-frequency switching and synchronous rectification applications.
Features
AI Translation
- Low Gate Charge Q9 results in Simple Drive Requirement R
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Effective Coss Specified
- RoHS Available HALOGEN FREE Available
Applications
AI Translation
- Switch Mode Power Supply (SMPS)
- Uninterruptible Power Supply
- High Speed Power Switching
C7316158 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IRFS11N50ATRLP | VISHAY | TO-263AB | 1,455 | $ 1.8093 | ||
| IRFS11N50APBF | VISHAY | D2PAK(TO-263) | 5 | $ 1.9972 | ||
| MS16N65S | MSKSEMI | TO-263 | 181 | $0.6328 $0.7031 | ||
| STB28N65M2 | ST | D2PAK | 1 | $ 5.1907 | ||
| STB28N60M2 | ST | D2PAK | 3 | $ 4.5019 | ||
| 16N65 | HXY MOSFET | TO-263 | 800 | $0.7819 $0.8885 | ||
| STB28N60DM2 | ST | D2PAK | 5 | $ 7.8031 | ||
| RS20N50S | REASUNOS | TO-263 | 686 | $0.7511 $0.7906 | ||
| SIHB17N80AE-GE3 | VISHAY | D2PAK(TO-263) | 10 | $ 2.9455 | ||
| STB26N60M2 | ST | D2PAK | 0 | $ 5.7723 |