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ST STF23NM60ND product image
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ST STF23NM60NDRoHS

Manufacturer
ST
MPN
STF23NM60ND
LCSC Part #
C7090664
Packaging
TO-220FP
Customer #
Key Attributes
19.5A 4V 150W 180mΩ@10V 1 N-channel TO-220FP Single FETs, MOSFETs RoHS
Datasheetpdf iconST STF23NM60ND
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QtyUnit Price(Reference Only)Total Amount
1+$ 8.0538$ 8.05
200+$ 3.2142$ 642.84
500+$ 3.1063$ 1553.15
1,000+$ 3.0539$ 3053.90
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-220FP
Operating Temperature-55℃~+150℃
Drain to Source Voltage-
Current - Continuous Drain(Id)19.5A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)180mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.1nF
Gate Charge(Qg)70nC@10V
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Introduction

AI Translation

These FDmesh™ II power MOSFETs with intrinsic fast-recovery body diode are manufactured using second-generation MDmesh™ technology. These innovative devices feature a new strip layout vertical structure, offering ultra-low on-resistance and excellent switching performance. They are ideal for bridge topologies and zero-voltage switching (ZVS) phase-shift converters.

Features

AI Translation
  • Best-in-class RDS(ON) × area product among fast recovery diode devices globally
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • High dv/dt and avalanche capability

Applications

AI Translation
  • Switching applications