VISHAY V30KM120HM3/H
| Producent | |
| Nr części prod. | V30KM120HM3/H |
| Nr LCSC | C6908441 |
| Opak. | - |
| Numer Klienta | |
| Klucz. cechy | 1 Independent 120V 930mV@30A 4.1A Single Diodes RoHS |
| Karta Katalogowa |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | VISHAY | |
| Opak. | - | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -40℃~+165℃ | |
| Voltage - DC Reverse (Vr) (Max) | 120V | |
| Voltage - Forward(Vf@If) | 930mV@30A | |
| Reverse Leakage Current (Ir) | 700uA@120V | |
| Non-Repetitive Peak Forward Surge Current | 240A | |
| Current - Rectified | 4.1A |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | VISHAY | |
| Opak. | - | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -40℃~+165℃ |
| Typ | Opis | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 120V | |
| Voltage - Forward(Vf@If) | 930mV@30A | |
| Reverse Leakage Current (Ir) | 700uA@120V | |
| Non-Repetitive Peak Forward Surge Current | 240A | |
| Current - Rectified | 4.1A |
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Funkcje
Tłumaczenie AI
- Trench MOS Schottky technology
- Low forward voltage drop, low power loss, high-efficiency operation
- MSL Level 1 per J-STD-020, LF max peak temperature 260°C
- AEC-Q101 compliant option available
- Automotive order code: base model P/N HM3
Zastosowania
Tłumaczenie AI
For use in low-voltage, high-frequency DC/DC converters, freewheeling diode, and polarity protection applications.
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 1.1352 | $ 1.14 |
| 200+ | $ 0.4532 | $ 90.64 |
| 500+ | $ 0.438 | $ 219.00 |
| 1,500+ | $ 0.4305 | $ 645.75 |
Standardowa Obudowa1500/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | VISHAY | |
| Opak. | - | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -40℃~+165℃ | |
| Voltage - DC Reverse (Vr) (Max) | 120V | |
| Voltage - Forward(Vf@If) | 930mV@30A | |
| Reverse Leakage Current (Ir) | 700uA@120V | |
| Non-Repetitive Peak Forward Surge Current | 240A | |
| Current - Rectified | 4.1A |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | VISHAY | |
| Opak. | - | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -40℃~+165℃ |
| Typ | Opis | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 120V | |
| Voltage - Forward(Vf@If) | 930mV@30A | |
| Reverse Leakage Current (Ir) | 700uA@120V | |
| Non-Repetitive Peak Forward Surge Current | 240A | |
| Current - Rectified | 4.1A |
Zgłoś błądPokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Trench MOS Schottky technology
- Low forward voltage drop, low power loss, high-efficiency operation
- MSL Level 1 per J-STD-020, LF max peak temperature 260°C
- AEC-Q101 compliant option available
- Automotive order code: base model P/N HM3
Zastosowania
Tłumaczenie AI
For use in low-voltage, high-frequency DC/DC converters, freewheeling diode, and polarity protection applications.
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

