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Infineon IMW65R048M1H
| Manufacturer | |
| MPN | IMW65R048M1H |
| LCSC Part # | C6879293 |
| Packaging | TO-247-3-41 |
| Customer # | |
| Key Attributes | MOSFET N-CH 650V 39A TO-247-3-41 |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3-41 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 39A | |
| Gate Threshold Voltage (Vgs(th)) | 5.7V | |
| Pd - Power Dissipation | 125W | |
| RDS(on) | 64mΩ@18V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.118nF | |
| Gate Charge(Qg) | 33nC@18V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3-41 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 39A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5.7V | |
| Pd - Power Dissipation | 125W | |
| RDS(on) | 64mΩ@18V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.118nF | |
| Gate Charge(Qg) | 33nC@18V |
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In-Stock: 22
22 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 24.0981 | $ 24.10 |
| 10+ | $ 23.3248 | $ 233.25 |
| 30+ | $ 21.9845 | $ 659.54 |
| 90+ | $ 20.8163 | $ 1873.47 |
Standard Packaging30/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3-41 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 39A | |
| Gate Threshold Voltage (Vgs(th)) | 5.7V | |
| Pd - Power Dissipation | 125W | |
| RDS(on) | 64mΩ@18V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.118nF | |
| Gate Charge(Qg) | 33nC@18V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3-41 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 39A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5.7V | |
| Pd - Power Dissipation | 125W | |
| RDS(on) | 64mΩ@18V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.118nF | |
| Gate Charge(Qg) | 33nC@18V |
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Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| SCT3040KLHRC11 | ROHM | TO-247N | 30 | $ 14.7706 | ||
| SCT3040KLGC11 | ROHM | TO-247N | 10 | $ 34.8368 | ||
| STWA57N65M5 | ST | TO-247 | 68 | $ 6.9853 | ||
| STW56N65DM2 | ST | TO-247-3 | 30 | $ 21.8074 | ||
| STW58N65DM2AG | ST | TO-247 | 1 | $ 15.2122 | ||
| TW048N65C,S1F | TOSHIBA | TO-247 | 0 | $ 21.9899 | ||
| NVHL082N65S3F | onsemi | TO-247-3 | 0 | $ 7.1184 | ||
| RSF65R070W | REASUNOS | TO-247-3 | 0 | $3.0530 $3.2136 | ||
| NTHL065N65S3HF | onsemi | TO-247-3 | 0 | $ 16.0286 | ||
| NTHL065N65S3F | onsemi | TO-247-3 | 0 | $ 8.4492 |