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Infineon S25HL512TDPMHM010 product image
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Infineon S25HL512TDPMHM010RoHS

Manufacturer
Infineon
MPN
S25HL512TDPMHM010
LCSC Part #
C6472047
Packaging
SOIC-16-300mil
Customer #
Key Attributes
512Mbit 2.7V~3.6V SPI SOIC-16-300mil Memory RoHS
Datasheetpdf iconInfineon S25HL512TDPMHM010
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QtyUnit Price(Reference Only)Total Amount
1+$ 20.3783$ 20.38
240+$ 8.1319$ 1951.66
480+$ 7.8603$ 3772.94
960+$ 7.726$ 7416.96
Standard Packaging240/Full Tray
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerInfineon
PackagingSOIC-16-300mil
Operating Temperature-40℃~+125℃
FeaturesPower-on reset;Hardware write protection;ECC error correction
Memory Size512Mbit
Voltage - Supply2.7V~3.6V
Program / Erase Cycles1,280,000 Cycles
Clock Frequency-
Data Retention - TDR (Year)25 Years
Block Erase Time(tBE)-
Write Cycle Time(tWC)-
Page Programming Time (Tpp)-
Standby Supply Current0.014mA
InterfaceSPI
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Features

AI Translation
  • 45nm technology, 2 bits stored per memory array cell
  • Multiple sector architecture options: uniform (all sectors 256KB), hybrid 1 (top or bottom 32×4KB sectors, remainder 256KB), hybrid 2 (top and bottom 16×4KB sectors each, remainder 256KB)
  • Page program buffer: 256 or 512 bytes
  • 1024-byte (32×32 bytes) one-time programmable Security Silicon region
  • Quad SPI interface supporting multiple protocols (1S-1S-4S, 1S-4S-4S, etc.); SDR up to 83 Mbps (166 MHz clock), DDR up to 102 Mbps (102 MHz clock)
  • Dual SPI interface supporting 1S-2S-2S protocol; SDR up to 41.5 Mbps (166 MHz clock)
  • Standard SPI interface supporting 1S-1S-1S protocol; SDR up to 21 Mbps (166 MHz clock)
  • Functional safety features compliant with ISO 26262 ASIL B, ASIL D ready
  • Endurance Flex architecture with high-endurance and extended data retention partitions
  • Data integrity CRC for memory array error detection
  • Secure boot: reports device initialization failures, detects configuration corruption, and provides recovery options
  • ECC with single-bit error correction and double-bit error detection
  • Sector erase status indicator for power interruption during erase
  • Protection features including legacy memory array and configuration protection, and advanced sector protection at individual sector granularity
  • Auto-boot for immediate memory array access after power-up
  • Hardware reset via CS#, dedicated RESET# pin, or DQ3_RESET# pin
  • SFDP support for device capability and feature discovery
  • Device ID, manufacturer ID, and identification
  • Data integrity: 256Mb main array minimum 640K program/erase cycles; 512Mb: 1.28M cycles; 1Gb: 2.56M cycles; 4KB sectors on all devices minimum 300K program/erase cycles; minimum 25-year data retention
  • Operating voltage: 1.7V to 2.0V (HS-T) or 2.7V to 3.6V (HL-T)
  • Operating temperature: Industrial -40°C to +85°C; Extended Industrial -40°C to +105°C; Automotive AEC-Q100 Grade 3: -40°C to +85°C; Grade 2: -40°C to +105°C; Grade 1: -40°C to +125°C
  • Package options: 256Mb and 512Mb — 16-pin SOIC (300mil) SO3016, 24-ball BGA (6×8 mm), 16-pin SOIC (300mil), 8-contact WSON (6×8 mm); 1Gb — 16-pin SOIC (300mil) SO3016, 24-ball BGA (8×8 mm), 16-pin SOIC (300mil)