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Nexperia PDTC115TMB,315 product image
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Nexperia PDTC115TMB,315RoHS

Manufacturer
Nexperia
MPN
PDTC115TMB,315
LCSC Part #
C552170
Packaging
SOT-883-3
Customer #
Key Attributes
50V 100 100mA 250mW 1 NPN (Pre-Biased) NPN SOT-883-3 Single, Pre-Biased Bipolar Transistors RoHS
Datasheetpdf iconNexperia PDTC115TMB,315
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.0175$ 0.02
10+$ 0.0137$ 0.14
30+$ 0.0116$ 0.35
100+$ 0.0103$ 1.03
500+$ 0.0092$ 4.60
1,000+$ 0.0086$ 8.60
Standard Packaging10000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors
ManufacturerNexperia
PackagingSOT-883-3
Current - Collector Cutoff100nA
Transition frequency(fT)230MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain100
Emitter-Base Voltage VEBO5V
Vce Saturation(VCE(sat))150mV
Current - Collector(Ic)100mA
Output Voltage(VO(on))-
Input Resistor100kΩ
Resistor Ratio-
Pd - Power Dissipation250mW
Voltage - Input(Max)(VI(off))-
Input Voltage (VI(on)@Ic,Vce)-
Operating temperature-65℃~+150℃
Number1 NPN (Pre-Biased)
typeNPN
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Introduction

AI Translation

NPN resistor-equipped transistor (RET) in a leadless ultra-compact DFN1006B-3 (SOT883B) SMD plastic package. PNP complementary type: PDTA115TMB.

Features

AI Translation
  • Output current capability up to 100 mA
  • Reduced component count
  • Built-in bias resistors
  • Lower placement cost
  • Simplified circuit design
  • AEC-Q101 qualified
  • Leadless ultra-compact SMD plastic package
  • Package height as low as 0.37 mm

Applications

AI Translation
  • Low-current peripheral driver
  • Control IC input
  • General-purpose transistor replacement in digital applications
  • Mobile applications