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ST STB100NF04T4
| Manufacturer | |
| MPN | STB100NF04T4 |
| LCSC Part # | C500663 |
| Packaging | D2PAK |
| Customer # | |
| Key Attributes | MOSFET N-CH 40V 120A D2PAK |
| Datasheet |  ST STB100NF04T4 |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF | |
| RDS(on) | 4.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.1nF | |
| Gate Charge(Qg) | 150nC@32V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF | |
| RDS(on) | 4.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.1nF | |
| Gate Charge(Qg) | 150nC@32V |
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Introduction
AI Translation
These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high - efficiency isolated DCDC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Features
AI Translation
- AEC - Q101 qualified
- Exceptional dv/dt capability
- 100% avalanche tested
- Low gate charge
Applications
AI Translation
- Switching applications
In-Stock: 219
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.6539 | $ 1.65 |
| 10+ | $ 1.5402 | $ 15.40 |
| 30+ | $ 1.4703 | $ 44.11 |
| 100+ | $ 1.3972 | $ 139.72 |
| 500+ | $ 1.3647 | $ 682.35 |
| 1,000+ | $ 1.3501 | $ 1350.10 |
Standard Packaging1000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF | |
| RDS(on) | 4.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.1nF | |
| Gate Charge(Qg) | 150nC@32V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF | |
| RDS(on) | 4.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.1nF | |
| Gate Charge(Qg) | 150nC@32V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high - efficiency isolated DCDC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Features
AI Translation
- AEC - Q101 qualified
- Exceptional dv/dt capability
- 100% avalanche tested
- Low gate charge
Applications
AI Translation
- Switching applications
C500663 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| RS85N150S | REASUNOS | TO-263 | 911 | $0.6193 $0.6518 | ||
| AUIRF2804STRL | Infineon | D2PAK | 8 | $3.0392 $7.236 | ||
| AUB034N10 | ANHI | TO-263 | 652 | $ 0.9158 | ||
| HSH15810 | HUASHUO | TO-263 | 475 | $ 0.7607 | ||
| TMB120N08A | WUXI UNIGROUP MICRO | TO-263 | 4 | $ 0.694 | ||
| HY3708B | HUAYI | TO-263-2L | 8 | $ 0.9505 | ||
| PSMN3R8-100BS-VB | VBsemi Elec | TO-263 | 17 | $2.0282 $2.1349 | ||
| PSMN5R6-100BS-VB | VBsemi Elec | TO-263(D2PAK) | 12 | $1.4405 $1.6947 | ||
| AUIRFS3206 | Infineon | D2PAK | 0 | $ 1.7365 | ||
| BUK662R7-55C,118 | Nexperia | D2PAK | 0 | $ 1.4489 |