KEXIN KI4435DY
| Manufacturer | KEXINAsian Brands |
| MPN | KI4435DY |
| LCSC Part # | C489342 |
| Packaging | SOIC-8 |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 8.8A SOIC-8 |
| Datasheet | |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 2 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | KEXIN | |
| Packaging | SOIC-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 8.8A | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Pd - Power Dissipation | 2.5W | |
| RDS(on) | 35mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 60nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | KEXIN | |
| Packaging | SOIC-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 8.8A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Pd - Power Dissipation | 2.5W | |
| RDS(on) | 35mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 60nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- VDS=-30V
- RDS(on)=0.02Ω@VGS=-10V
- RDS(on)=0.035Ω@VGS=-4.5V
In-Stock: 29
29 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.1678 | $ 0.17 |
| 10+ | $ 0.1329 | $ 1.33 |
| 30+ | $ 0.118 | $ 3.54 |
| 100+ | $ 0.0993 | $ 9.93 |
| 500+ | $ 0.091 | $ 45.50 |
| 1,000+ | $ 0.086 | $ 86.00 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | KEXIN | |
| Packaging | SOIC-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 8.8A | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Pd - Power Dissipation | 2.5W | |
| RDS(on) | 35mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 60nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | KEXIN | |
| Packaging | SOIC-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 8.8A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Pd - Power Dissipation | 2.5W | |
| RDS(on) | 35mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 60nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- VDS=-30V
- RDS(on)=0.02Ω@VGS=-10V
- RDS(on)=0.035Ω@VGS=-4.5V
C489342 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



