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onsemi NDB6060L
| Manufacturer | |
| MPN | NDB6060L |
| LCSC Part # | C464069 |
| Packaging | D2PAK |
| Customer # | |
| Key Attributes | 60V 48A 1V 100W 25mΩ@5V 1 N-channel D2PAK Single FETs, MOSFETs RoHS |
| Datasheet |  onsemi NDB6060L |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | D2PAK | |
| Operating Temperature | -65℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 48A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 100W | |
| Reverse Transfer Capacitance (Crss@Vds) | 400pF | |
| RDS(on) | 25mΩ@5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2nF | |
| Gate Charge(Qg) | 60nC@5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | D2PAK | |
| Operating Temperature | -65℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 48A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 100W | |
| Reverse Transfer Capacitance (Crss@Vds) | 400pF | |
| RDS(on) | 25mΩ@5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2nF | |
| Gate Charge(Qg) | 60nC@5V |
Introduction
These logic level N-channel enhancement mode power MOSFETs are manufactured using onsemi's proprietary high cell density DMOS technology. This ultra-high density process is specially designed to minimize on-resistance, deliver excellent switching performance, and withstand high energy pulses in avalanche and commutation modes. These devices are particularly suited for low-voltage applications such as automotive, DC/DC converters, PWM motor control, and other battery-powered circuits requiring fast switching, low in-line power dissipation, and immunity to transient disturbances.
Features
- Low drive requirements, directly driven by logic drivers. VGS(TH) < 2.0V.
- Key DC electrical parameters specified at high temperature.
- Robust internal source-drain diode eliminates external Zener diode transient suppressors.
- Maximum junction temperature rating of 175°C.
- High-density cell design for ultra-low RDS(ON).
- Available in TO-220 and TO-263 (D2PAK) packages for through-hole and SMT applications.
Applications
- Automotive
- DC/DC Converters
- PWM Motor Control
- Other Battery-Powered Circuits
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.6811 | $ 0.68 |
| 10+ | $ 0.6673 | $ 6.67 |
| 30+ | $ 0.6566 | $ 19.70 |
| 100+ | $ 0.6474 | $ 64.74 |
Standard Packaging800/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | D2PAK | |
| Operating Temperature | -65℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 48A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 100W | |
| Reverse Transfer Capacitance (Crss@Vds) | 400pF | |
| RDS(on) | 25mΩ@5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2nF | |
| Gate Charge(Qg) | 60nC@5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | D2PAK | |
| Operating Temperature | -65℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 48A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 100W | |
| Reverse Transfer Capacitance (Crss@Vds) | 400pF | |
| RDS(on) | 25mΩ@5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2nF | |
| Gate Charge(Qg) | 60nC@5V |
Introduction
These logic level N-channel enhancement mode power MOSFETs are manufactured using onsemi's proprietary high cell density DMOS technology. This ultra-high density process is specially designed to minimize on-resistance, deliver excellent switching performance, and withstand high energy pulses in avalanche and commutation modes. These devices are particularly suited for low-voltage applications such as automotive, DC/DC converters, PWM motor control, and other battery-powered circuits requiring fast switching, low in-line power dissipation, and immunity to transient disturbances.
Features
- Low drive requirements, directly driven by logic drivers. VGS(TH) < 2.0V.
- Key DC electrical parameters specified at high temperature.
- Robust internal source-drain diode eliminates external Zener diode transient suppressors.
- Maximum junction temperature rating of 175°C.
- High-density cell design for ultra-low RDS(ON).
- Available in TO-220 and TO-263 (D2PAK) packages for through-hole and SMT applications.
Applications
- Automotive
- DC/DC Converters
- PWM Motor Control
- Other Battery-Powered Circuits
C464069 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IRFZ44ESPBF-VB | VBsemi Elec | TO-263(D2PAK) | 9 | $0.6285 $0.7393 | ||
| BUK9624-55A,118-VB | VBsemi Elec | TO-263 | 5 | $0.7838 $0.825 | ||
| PHB21N06LT,118-VB | VBsemi Elec | TO-263 | 5 | $0.7838 $0.825 | ||
| BUK9628-55A,118-VB | VBsemi Elec | TO-263 | 5 | $0.7838 $0.825 | ||
| BUK9635-55A,118-VB | VBsemi Elec | TO-263 | 5 | $0.7931 $0.8348 | ||
| PHB20N06T-VB | VBsemi Elec | TO-263 | 5 | $0.7931 $0.8348 | ||
| HY1606B | HUAYI | TO-263-2L | 16 | $ 0.4475 | ||
| CMB50N10 | Cmos | TO-263 | 0 | $0.5944 $0.6256 | ||
| RSJ550N10TL | ROHM | TO-263 | 0 | $ 1.454 | ||
| IRLZ44STRRPBF | VISHAY | D2PAK(TO-263) | 0 | $ 3.637 |