LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
MACOM MADP-030015-13140P product image
Images for reference only

MACOM MADP-030015-13140P

Manufacturer
MPN
MADP-030015-13140P
LCSC Part #
C4467992
Packaging
0603
Customer #
Key Attributes
Standalone 115V 0603 RF Diodes
Datasheetpdf iconMACOM MADP-030015-13140P
Out of Stock
Notify Me
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit Price(Reference Only)Total Amount
1+$ 3.1978$ 3.20
200+$ 1.2383$ 247.66
500+$ 1.1949$ 597.45
1,000+$ 1.1733$ 1173.30
Standard Packaging3000/Full Reel
Better price for more quantity?
$

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Diodes/RF Diodes
ManufacturerMACOM
Packaging0603
Diode ConfigurationStandalone
DC Reverse Voltage(Vr)115V

Introduction

AI Translation

This device is a silicon-on-glass PIN diode chip manufactured using MACOM's proprietary HMC process. The device features two silicon pedestals embedded in low-loss, low-dispersion glass. The diode is formed on top of one of the pedestals, with connection to the back of the device achieved by making the pedestal sidewalls conductive. A surface mount device is fabricated using a selective backside metallization process. This vertical topology enables excellent thermal transfer. The top of the device is fully encapsulated with silicon nitride, with an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and anode air bridge during handling and assembly.

Features

AI Translation
  • 0603 package
  • SMT
  • 15μm intrinsic region length device
  • Wire bond-free
  • Silicon nitride passivation
  • Polymer scratch protection
  • Low parasitic capacitance and inductance
  • High average and peak power handling capability

Applications

AI Translation

These unpackaged devices are suitable for applications with moderate incident power (≤50 dBm/CW), or peak power ≤75 dBm with pulse width ≤1μs and duty cycle ≤0.01%. Compared to their plastic-packaged counterparts, their low parasitic inductance of 0.4 nH and excellent RC constant make them a superior choice for high-frequency switching components.