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Infineon IPW65R060CFD7XKSA1
| Produttore | |
| Cod. Prod. | IPW65R060CFD7XKSA1 |
| Cod. LCSC | C3278908 |
| Imballo | TO-247-3 |
| Numero Cliente | |
| Attr. chiave | 650V 36A 4.5V 171W 60mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS |
| Scheda Tecnica |  Infineon IPW65R060CFD7XKSA1 |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-247-3 | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 51pF | |
| Current - Continuous Drain(Id) | 36A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 171W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.231nF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.288nF | |
| Gate Charge(Qg) | 68nC@10V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-247-3 | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 51pF | |
| Current - Continuous Drain(Id) | 36A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 171W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.231nF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.288nF | |
| Gate Charge(Qg) | 68nC@10V | |
| Type | N-Channel |
Descrizione
The latest 650 V CoolMOS™ CFD7 extends the CFD7 family's voltage range and is the successor to the 650 V CoolMOS™ CFD2. With improved switching performance and excellent thermal characteristics, the 650 V CoolMOS™ CFD7 achieves maximum efficiency in resonant switching topologies such as LLC and phase-shifted full bridge (ZVS). As part of Infineon's fast body diode portfolio, this new product family combines all the advantages of fast switching technology with outstanding hard commutation robustness. CoolMOS™ CFD7 technology meets the highest standards of efficiency and reliability while supporting high power density solutions.
Caratteristiche
- Ultra-fast body diode
- 650 V breakdown voltage
- Best-in-class RDS(ON)
- Reduced switching losses
- Low RDS(ON) temperature coefficient
Applicazioni
- Suitable for soft-switching topologies
- Optimized for phase-shifted full-bridge (ZVS) and LLC applications — servers, telecom, EV charging, solar
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 9.6194 | $ 9.62 |
| 10+ | $ 8.6577 | $ 86.58 |
| 30+ | $ 8.0696 | $ 242.09 |
| 100+ | $ 7.5789 | $ 757.89 |
Package Standard30/Full Tube | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-247-3 | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 51pF | |
| Current - Continuous Drain(Id) | 36A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 171W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.231nF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.288nF | |
| Gate Charge(Qg) | 68nC@10V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-247-3 | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 51pF | |
| Current - Continuous Drain(Id) | 36A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 171W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.231nF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.288nF | |
| Gate Charge(Qg) | 68nC@10V | |
| Type | N-Channel |
Descrizione
The latest 650 V CoolMOS™ CFD7 extends the CFD7 family's voltage range and is the successor to the 650 V CoolMOS™ CFD2. With improved switching performance and excellent thermal characteristics, the 650 V CoolMOS™ CFD7 achieves maximum efficiency in resonant switching topologies such as LLC and phase-shifted full bridge (ZVS). As part of Infineon's fast body diode portfolio, this new product family combines all the advantages of fast switching technology with outstanding hard commutation robustness. CoolMOS™ CFD7 technology meets the highest standards of efficiency and reliability while supporting high power density solutions.
Caratteristiche
- Ultra-fast body diode
- 650 V breakdown voltage
- Best-in-class RDS(ON)
- Reduced switching losses
- Low RDS(ON) temperature coefficient
Applicazioni
- Suitable for soft-switching topologies
- Optimized for phase-shifted full-bridge (ZVS) and LLC applications — servers, telecom, EV charging, solar
C3278908 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Confezione | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| WTM54N65AMP | WPMtek | TO247 | 30 | $ 3.3738 | ||
| IPW65R060CFD7-VB | VBsemi Elec | TO-247AC | 5 | $4.6884 $5.5157 | ||
| NTHL065N65S3F-VB | VBsemi Elec | TO-247AC | 5 | $4.6884 $5.5157 | ||
| IPW65R075CFD7A-VB | VBsemi Elec | TO-247AC | 4 | $4.6884 $5.5157 | ||
| TK49N65W5-VB | VBsemi Elec | TO-247AC | 1 | $4.6884 $5.5157 | ||
| NVHL072N65S3 | onsemi | TO-247-3 | 0 | $ 6.6801 | ||
| VBP165R41SFD | VBsemi Elec | TO-247AC | 0 | $ 7.9606 | ||
| TK065N65Z-VB | VBsemi Elec | TO-247 | 0 | $ 8.389 | ||
| FCH067N65S3-F155 | onsemi | TO-247-3 | 0 | $ 5.6317 | ||
| TW045N120C,S1F | TOSHIBA | TO-247 | 0 | $ 17.7516 |