Infineon IPA65R650CEXKSA1
| Producent | |
| Nr części prod. | IPA65R650CEXKSA1 |
| Nr LCSC | C3278863 |
| Opak. | TO-220-3-FP |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 650V 10.1A TO-220-3-FP |
| Karta Katalogowa |
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | TO-220-3-FP | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 30pF | |
| Current - Continuous Drain(Id) | 10.1A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 28W | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | 650mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 440pF | |
| Gate Charge(Qg) | 23nC@10V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | TO-220-3-FP | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 30pF | |
| Current - Continuous Drain(Id) | 10.1A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 28W | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | 650mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 440pF | |
| Gate Charge(Qg) | 23nC@10V |
Opis
CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
Funkcje
- Extremely low losses due to very low FOM Rdson*Qg and Eoss
- Very high commutation ruggedness
- Easy to use/drive
- Pb-free plating, Halogen free mold compound
- Qualified for standard grade applications
Zastosowania
- PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV and indoor lighting.
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 3.0929 | $ 3.09 |
| 10+ | $ 2.675 | $ 26.75 |
| 30+ | $ 2.426 | $ 72.78 |
| 100+ | $ 2.0805 | $ 208.05 |
| 500+ | $ 1.9644 | $ 982.20 |
| 1,000+ | $ 1.9116 | $ 1911.60 |
Standardowa Obudowa3000/Full Tube | ||
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | TO-220-3-FP | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 30pF | |
| Current - Continuous Drain(Id) | 10.1A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 28W | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | 650mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 440pF | |
| Gate Charge(Qg) | 23nC@10V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | TO-220-3-FP | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 30pF | |
| Current - Continuous Drain(Id) | 10.1A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 28W | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | 650mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 440pF | |
| Gate Charge(Qg) | 23nC@10V |
Opis
CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
Funkcje
- Extremely low losses due to very low FOM Rdson*Qg and Eoss
- Very high commutation ruggedness
- Easy to use/drive
- Pb-free plating, Halogen free mold compound
- Qualified for standard grade applications
Zastosowania
- PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV and indoor lighting.
C3278863 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



